1/f Noise Model for Double-Gate FinFET Biased in Weak Inversion

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1/f noise model of long channel lightly-doped FinFET biased in weak inversion has been described using Hooge’s theory. From the drain current equation and the channel conductance expression, the total number of carriers under the gates has been evaluated. This quantity is the main parameter needed to deduce the Hooge parameter αH in the subthreshold conduction. 1/f noise in n-channel double-gate FinFETs has been investigated. These transistors exhibit 1/f noise in agreement with Hooge’s theory when they are biased in weak inversion due to their volume inversion conduction behaviors.

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Journal: TechConnect Briefs
Volume: 3, Nanotechnology 2009: Biofuels, Renewable Energy, Coatings, Fluidics and Compact Modeling
Published: May 3, 2009
Pages: 639 - 642
Industry sector: Sensors, MEMS, Electronics
Topic: WCM - Compact Modeling
ISBN: 978-1-4398-1784-1