Schroter M. – TechConnect Briefs

Flexible virtual source compact model for fast modeling of new channel materials and device architectures

The end of bulk silicon-based transistor technology has often been predicted in the scientific and technical literature. As a result, many new channel materials (such as III-V semiconductors, 2D materials, nanowires and -tubes) and device [...]

Trap-induced apparent linearity of CNTFETs (invited)

Haferlach M., Claus M., TU Dresden, DE

Compared to conventional bulk semiconductors carbon nanotubes (CNTs) possess a number of properties which may make CNT technology superior for certain applications. In particular, the one-dimensional (1D) transport in CNTs leads not only to a [...]

Critical review of CNTFET compact models

Claus M., Haferlach M., Gross D., Technische Universität Dresden, DE

The very recent progress in manufacturing carbon nanotube transistors (CNTFETs) makes these transistors attractive for analog HF circuit applications for which adequate compact models accurately describing the transistor behavior are needed. So far, most models [...]

Design study of CNT transistors layouts for high frequency analog circuits

Claus M., Technische Universität Dresden, DE

CNTFET technology is examined for high speed analog circuits. Design guidelines are deduced based on a realistic extrinsic circuit model. Moreover, numerical device simulations are used to derive specifications for CNTFET compact models suitable for [...]

Improved layout dependent modeling of the base resistance in advanced HBTs

Lehmann S., Schroter M., University of Technology Dresden, DE

Existing equations for describing the layout dependent base resistance are improved and extended for heterojunction bipolar transistors (HBTs) in advanced process technologies. The new equations have been developed using quasi-3D device simulation and have been [...]

Non-standard geometry scaling effects

Lehmann S., Technische Universität Dresden, DE

The impact of process and geometry effects on important electrical parameters of SiGe HBTs as a function of emitter width is investigated and explained using device and circuit simulations. The goal is to provide a [...]

Charge-storage calculation for Si-based bipolar transistors from device simulation

Tran H., UCSD, US

Various methods for calculating regional charge storage components in bipolar transistors fromdevice simulation results are compared with respect to their usefulness for compact modeling. Themethods are evaluated for Si and SiGe transistors with very different [...]

Compact Bipolar Transistor Modeling – Issues and possible solutions

Schroter M., University of Technology Dresden, DE

Recently, several advanced compact bipolar transistor models ave become available to the design community. For existing technologies, these models (and their internal formulation) are believed to offer sufficient flexibility and accuracy, especially compared to the [...]

Bias Dependent Modeling of Collector-Base Junction Effects in Bipolar Transistors

Tran H., Schroter M., University of Technology Dresden, DE

An analytical formulation for the voltage and current dependent electric field in the collector of a bipolar transistor is presented. The new field expression is then employed for calculating the base-collector depletion capacitance and the [...]

Two-/Three-Dimensional GICCR for Si/SiGe Bipolar Transistors

Tran H., University of Technology Dresden, DE

This paper presents the derivation of a two- and threedimensional (2D/3D) generalized Integral-Charge Control Relation (GICCR) that is based on an exact physical relation for the transfer current of bipolar transistors. The resulting compact equation [...]