Lin C.H. – TechConnect Briefs

Nanostructured silicon coupled with Iron Oxide Magnetic Nanoparticles as Enhanced Desorption/Ionization on Silicon Mass Spectrometry for Phosphopeptide Analysis

Tsao C.W., Chen W.Y., Cheng Y.C., Lin C.H., Cheng Y.C., National Central University, TW

Stem cells can differentiated into various cell types which can be used to repair damage organs in regenerative medicine applications. The cell regulation process such as cell division, differentiation, and apoptosis are deeply related to [...]

Tunable-Linewidth Nanoimprint Working Stamps Fabricated by Double Oblique Metal Deposition

Lin C.H., Wu C-L, Sung C.K., National Tsing Hua University, TW

This paper proposes a low cost but rapid methodology for fabricating working stamps with tunable line-width or pitch structures. Conventionally, the master stamp for nanoimprint lithograph (NIL) is made of silicon by e-beam lithography, which [...]

10GHz Surface Acoustic Wave Filter Fabrication by UV Nano-Imprint

Chen H.J.H., Chen N.H., Chen H.J.H., Chen N.H., Lin C.H., Huang F.S., National Tsing Hua University, TW

Surface acoustic wave (SAW) devices have been widely implemented for wireless communications. Recently, SAW devices continue the upward trend in frequency for higher functionality. Nanoimpirnt can adequately offer mass production technique on interdigital transducer (IDT) [...]

A Versatile Multigate MOSFET Compact Model: BSIM-MG

Hu C., Dunga M., Lin C.H., Lu D., Niknejad A., University of California-Berkeley, US

BSIM-MG is a surface-potential based compact model for multi-gate MOSFETs such as FinFETs fabricated on either SOI or bulk substrates. It can model transistors with the gate controlling two, three, or four sides of the [...]

BSIM4 and BSIM Multi-Gate Progress

Dunga M.V., Lin C.H., Xi X., Chen S., Lu D.D., Niknejad A.M., Hu C., UC-Berkeley, US

Compact models form an integral part of any circuit design environment, ranging from analog and digital design to mixed-signal design worlds. The models need to be developed and improved in parallel with technology advancements to [...]

Compact Modeling for RF and Microwave Integrated Circuits

Niknejad A.M., Chan M., Hu C., Brodersen B., Xi J., He J., Emami S., Doan C., Cao Y., Su P., Wan H., Dunga M., Lin C.H., University of California at Berkeley, US

Compact modeling has been an integral part of the design of integrated circuits for digital and analog applications. The availability of scalable CMOS device models has enabled rapid simulation and design of present and future [...]

A Framework for Generic Physics Based Double-Gate MOSFET Modeling

Chan M., Taur Y., Lin C.H., He J., Niknejad A., Hu C., Hong Kong University of Science & Technology, HK

This paper presents a framework to develop a generic and physical Double-Gate MOSFET model. Due to limited available physical data and existence of a large variety of device structures, flexibility to assemble model modules to [...]

Quasi-2D Compact Modeling for Double-Gate MOSFET

Chan M., Man T.Y., He J., Xi X., Lin C.H., Lin X., Lin C.H., Lin X., Ko P.K., Niknejad A.M., Hu C., Hong Kong University of Science and Technology, HK

This paper presents an approach to model the characteristics of undoped Double-Gate MOSFETs without relying on the charge-sheet approximation. Due to the extremely thin silicon film used, the inversion charge thickness becomes comparable to the [...]

The Development of Next Generation BSIM for Sub-100nm Mixed-Signal Circuit Simulation

Xi X., He J., Heyderi B., Dunga M., Lin C.H., Heyderi B., Wan H., Chan M., Niknejad A.M., Hu C., University of California at Berkeley, US

This paper describes the next generation BSIM model for aggressively scaled CMOS technology. New features in the model include more accurate non-charge-sheet based physics, completely continuous current and derivatives, and extendibility to non-traditional CMOS based [...]

Challenges in Compact Modeling for RF and Microwave Applications

Niknejad A., Dunga M., Heydari B., Wan H., Lin C.H., Emami S., Doan C., Xi X., He J., Heydari B., Hu C., University of California at Berkeley, US

Commercial CMOS chips routinely operate at frequencies up to 5 GHz and exciting new opportunities exists in higher frequency bands such as 3-10 GHz, 17 GHz, 24 GHz, and 60 GHz. Many research groups have [...]