Galup-Montoro C. – Page 2 – TechConnect Briefs

Extraction of Mosfet Effective Channel Length and Width Based on the Transconductance-To-Current Ratio

Cunha A.I.A., Schneider M.C., Galup-Montoro C., Caetano C.D.C., Machado M.B., Federal University of Santa Catarina, BR

This paper presents a very simple methodology for determining the effective channel length and width, which is independent of the determination of the threshold voltage. The procedure is based on measurement of the transconductance-to-current ratio [...]

Analog Design Tool based on the ACM model

Galup-Montoro C., Schneider M.C., dos Reis Machado C., Universidade Federal de Santa Catarina, BR

This paper presents MOSVIEW, a software tool for transistor-level analog design, which is based on the Advanced Compact MOSFET (ACM) model [1, 2], derived from physics. This tool allows rapid exploration of the design space. [...]

All-Region MOS Model of Mismatch due to Random Dopant Placement

Klimach H., Galup-Montoro C., Schneider M.C., Universidade Federal de Santa Catarina, BR

Electron device matching has been a key factor on the performance of today’s analog or even digital electronic circuits. This paper presents a study of drain current matching in MOS transistors. A model for MOS [...]

Comparison of Surface Potential and Charge-based MOSFET Core Models

Galup-Montoro C., Schneider M., Pahim V.C., Rios R., Universidade Federal de Santa Catarina, BR

Since the next generation MOSFET model will be based on either surface potential or inversion charge, a comparison between the two approaches is timely. In this paper, we will analyze in some detail the fundamentals [...]

Advanced Compact Models for MOSFETs

Watts J., McAndrew C., Enz C., Galup-Montoro C., Gildenblat G., Hu C., van Langevelde R., Miura-Mattausch M., Rios R., Sah C-T, Joint Paper, US

The combination of decreasing MOSFET dimensions and increasing use of MOSFETs for analog and RF application has created the need for advanced compact models for MOSFET circuit design. The first generation of MOSFET models rely [...]

Self-Consistent Models of DC, AC, Noise and Mismatch for the MOSFET

Galup-Montoro C., Schneider M.C., Arnaud A., Klimach H., Universidade Federal de Santa Catarina, BR

This paper shows how the full compatibility of the ACM model with the quasi-Fermi potential formulation for the drain current allows the derivation of a very simple model of the MOSFET channel. As a result, [...]

Theory, Development and Applications of the Advanced Compact MOSFET (ACM) Model

Galup-Montoro C., Schneider M.C., Cunha A.I.A., Gouveia-Filho O.C., Universidade Federal de Santa Catarina, BR

This paper presents a physics-based advanced compact MOSFET (ACM) model. The ACM model is composed of very simple expressions, valid for any inversion level, conserves charge and preserves the source-drain symmetry of the transistor. We [...]