Since the next generation MOSFET model will be based on either surface potential or inversion charge, a comparison between the two approaches is timely. In this paper, we will analyze in some detail the fundamentals of the two approaches. We will compare the expressions for inversion charge and gate capacitance.
Journal: TechConnect Briefs
Volume: Technical Proceedings of the 2005 Workshop on Compact Modeling
Published: May 8, 2005
Pages: 13 - 18
Industry sectors: Advanced Materials & Manufacturing | Sensors, MEMS, Electronics
Topics: Nanoparticle Synthesis & Applications