This paper presents a physics-based advanced compact MOSFET (ACM) model. The ACM model is composed of very simple expressions, valid for any inversion level, conserves charge and preserves the source-drain symmetry of the transistor. We highlight the theory and approximations behind the ACM model and show its usefulness as a powerful tool for characterization, simulation, and design.
Journal: TechConnect Briefs
Volume: 2, Technical Proceedings of the 2003 Nanotechnology Conference and Trade Show, Volume 2
Published: February 23, 2003
Pages: 254 - 257
Industry sector: Sensors, MEMS, Electronics
Topic: Compact Modeling