University of California at Berkeley

Drain Induced Barrier Lowering (DIBL) Effect on the Intrinsic Capacitances of Nano-Scale MOSFETs

Karim M.A., Venugopalan S., Chauhan Y.S., Lu D., Niknejad A., Hu C., University of California at Berkeley, US

MOSFET intrinsic capacitances going negative is a major concern in the compact model community. Negative Intrinsic Capacitances (NIC) can raise non-convergence issues in circuit simulators. In some cases NICs can be explained using physical phenomena. [...]

Compact Modeling for RF and Microwave Integrated Circuits

Niknejad A.M., Chan M., Hu C., Brodersen B., Xi J., He J., Emami S., Doan C., Cao Y., Su P., Wan H., Dunga M., Lin C.H., University of California at Berkeley, US

Compact modeling has been an integral part of the design of integrated circuits for digital and analog applications. The availability of scalable CMOS device models has enabled rapid simulation and design of present and future [...]

An Advanced Surface-Potential-Plus MOSFET Model

He J., Xi X., Chan M., Niknejad A., Hu C., University of California at Berkeley, US

Like other surface-potential based model, our surface-potential-plus model starts with charge-sheet approximation, uses the quasi-Fermi-potential to integrate drift and diffusion current and formulates an inversion charge equation that can be analytically solved for given terminal [...]

The Development of Next Generation BSIM for Sub-100nm Mixed-Signal Circuit Simulation

Xi X., He J., Heyderi B., Dunga M., Lin C.H., Heyderi B., Wan H., Chan M., Niknejad A.M., Hu C., University of California at Berkeley, US

This paper describes the next generation BSIM model for aggressively scaled CMOS technology. New features in the model include more accurate non-charge-sheet based physics, completely continuous current and derivatives, and extendibility to non-traditional CMOS based [...]

Challenges in Compact Modeling for RF and Microwave Applications

Niknejad A., Dunga M., Heydari B., Wan H., Lin C.H., Emami S., Doan C., Xi X., He J., Heydari B., Hu C., University of California at Berkeley, US

Commercial CMOS chips routinely operate at frequencies up to 5 GHz and exciting new opportunities exists in higher frequency bands such as 3-10 GHz, 17 GHz, 24 GHz, and 60 GHz. Many research groups have [...]