Nanyang Technological University – Page 4

Gummel Symmetry with Higher-order Derivatives in MOSFET Compact Models

See G.H., Zhou X., Chandrasekaran K., Chiah S.B., Zhu G.J., Zhu Z.M., Lim G.H., Wei C.Q., Lin S-H, Zhu G.J., Zhu Z.M., Nanyang Technological University, SG

One of the critical problems in Gummel symmetry at higher-order derivatives that still exists in current and next generation MOS compact models has been solved with a simple modification of the mathematical smoothing function. The [...]

Unified Compact Model for Generic Double-Gate MOSFETs

Zhou X., See G.H., Zhu G.J., Zhu Z.M., Chandrasekaran K., Zhu G.J., Zhu Z.M., Rustagi S.C., Lin S-H, Wei C.Q., Lim G.H., Nanyang Technological University, SG

A generic double-gate (DG) MOSFET follows a generalized (input) voltage equation from the first integral of Poisson equation and Gauss' law at the two gates, which is implicit and, in general, non-integrable when the channel [...]

Nonequilibrium molecular dynamics simulation for size effects on thermal conductivity of silicon nanostructures

Liu X.J., Yang J.P., Yang Y-W, Yang J.P., Yang Y-W, Nanyang Technological University, SG

The thermal conductivity of silicon nanostructures was investigated using the Tersoff potential based Nonequilibrium molecular dynamics (NEMD) simulation approach. In such bond-order NEMD simulation model, the quality of the Tersoff potential for heat transport of [...]

Compact Modeling of Doped Symmetric DG MOSFETs with Regional Approach

Chandrasekaran K., Zhu Z.M., Zhou X., Shangguan W., See G.H., Chiah S.B., Rustagi S.C., Singh N., Nanyang Technological University, SG

A compact model for the explicit surface potential equation of doped symmetric double-gate MOSFET from Poisson equation with regional approach is presented. It’s scalable for all doping and channel thicknesses and has been proved to [...]

Unified Approach to Bulk/SOI/UTB/s-DG MOSFET Compact Modeling

Zhou X., Chandrasekaran K., Chiah S.B., Shangguan W., Zhu Z., See G.H., Mani Pandey S., Lim G.H., Rustagi S., Cheng M., Chu S., Hsia L.-C., Nanyang Technological University, SG

In this paper, we extend our unified regional approach to bulk-MOS charge modeling with non-pinned surface potential for various device structures such as PD/FD/UTB SOI and s-DG MOSFETs, including strained-Si channel. The regional solutions make [...]

Interpretation of Anomalous Photoluminescence Peak in GaAs1-xNx Grown by Molecular Beam Epitaxy

Fan W.J., Cheah W.K., Yoon S.F., Zhang D.H., Liu R., Wee A.T.S., Nanyang Technological University, SG

Low-temperature (10K) photoluminescence (PL) measurements of GaAs1-xNx epitaxial layers grown on GaAs by solid-source molecular beam epitaxy (SSMBE) reveal an anomalous second peak. Rapid thermal annealing (RTA) of a specific GaAsN sample reveals a lower [...]

Instability in flatband votlage of SiO2 embedded with silicon nanocrystals

Ng C.Y., Wong J.I., Yang M., Chen T.P., Nanyang Technological University, SG

In this work, the stability of the flatband voltage due to the Si-ions implantation into the SiO2 and subsequent annealing is being studied. There are lack of study on the impact of different annealing temperature [...]

Static dielectric constant of SiO2 embedded with silicon nanocrystals

Ng C.Y., Yang M., Wong J.I., Chen T.P., Nanyang Technological University, SG

The static dielectric constant of isolated silicon nanocrystal (nc-Si) embedded in a SiO2 thin film synthesized by Si+ implantation has been determined from capacitance measurement based on the Maxwell-Garnett effective medium approximation and the Stopping [...]

Curing Quantum Dots using Inductively Coupled Argon Plasma

Mei T., Nie D., Djie H.S., Ooi B.S., Nanyang Technological University, SG

Great advancement achieved in quantum dot (QD) growth using Molecular Beam Epitaxy or Metal-Organic Vapor Phase Epitaxy (MOVPE) has made QD-based devices demonstrate superior performances.1 However, QD structures are highly-strained material systems grown under low [...]

A Technology-based Compact Model for Predictive Deep-Submicron MOSFET Modeling and Characterization

Zhou X., Chiah S.B., Lim K.Y., Nanyang Technological University, SG

This paper presents new development results of our compact model (Xsim) for deep-submicron MOSFETs. Although a threshold-voltage-based and source-referenced regional model, Xsim meets the basic requirements of continuity (to third-order derivatives), scalability (entire geometry range), [...]