In this work, the stability of the flatband voltage due to the Si-ions implantation into the SiO2 and subsequent annealing is being studied. There are lack of study on the impact of different annealing temperature and annealing duration on the flatband voltage shift. Two type of annealing condition is being carried out, first is by using conventional furnace annealing and the second is by using rapid thermal annealing (RTA). It is observed that by using conventional furnace annealing at temperature of 900 oC for 20 minutes, the flatband voltage shift can be reduced to 13 V) if the annealing is carried out via RTA process for 1000 oC for 20s. The discrepancy was due to the fact of the insufficient duration to remove the remaining Si ions trapped in the SiO2. It is observed that the remaining Si-ions can affect the stability of the flatband voltage shift of the devices.
Journal: TechConnect Briefs
Volume: 1, Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 1
Published: May 7, 2006
Pages: 812 - 814
Industry sector: Advanced Materials & Manufacturing
Topic: Materials Characterization & Imaging