US – Page 436 – TechConnect Briefs

Compact Modeling of Tunneling Breakdown in PN Junctions for Computer-Aided ESD Design (CAD for ESD)

Subramanian Y., Darling R.B., University of Washington, US

This paper presents compact, physically-based electrothermal models for direct as well as indirect bandgap tunneling processes in pn-junctions for use in network simulators (e.g. Saber or VHDL-A). The model for indirect tunneling has been validated [...]

Simulation of Heterojunction Bipolar Transistor with Domain Decomposition Method

Zhang Y., Ruden P.P., Oklahoma State University, US

Domain decomposition method is used in simulation of the band profile and the majority carrier concentration profile of AlGaN/GaN heterojunction bipolar transistors. The method is very stable and efficient. With this method different device structures [...]

Physics-Based and Compact Models for Self-Heating in High-Speed Bipolar Integrated Circuits

Pacelli A., Palestri P., Mastrapasqua M., State University of New York-Stony Brook, US

We present three-dimensional heat-transport simulation for bipolar transistors. The simulations are validated on experimental data, and are employed to develop analytical models for the thermal resistance of devices fabricated on bulk and SOI substrate, and [...]

A Comprehensive Modeling of MOS Transistors in a 0.35um Technology for Analog and Digital Applications

Keshavarz A., Khare P., Sampson R., STMicroelectronics, US

The purpose of this work is to present a comprehensive report of the MOS transistor characteristics in a 0.35um technology, both types being surface devices. Results include extensive geometrical and temperature dependencies of the most [...]

An Investigation on Modeling and Statistical Simulation of Si-Ge Heterojunction Bipolar Transistors for Characterizing Their Dependence on Germanium Content

Sipahi L.B., Sanders T.J., Florida Institute of Technology, US

Although silicon is by far the most widely utilized manufactured semiconductor material, it is very poor in terms of mobilities of holes and electrons, which give rise to unacceptable low operation speeds. Far higher charge-carrier [...]

Modeling, Simulation and Comparative Analysis of RF Bipolar and MOS Low Noise Amplifiers for Determining Their Performance Dependence on Silicon Processing

Sipahi L.B., Sanders T.J., Florida Institute of Technology, US

In this study, an investigation into MOS (metal-oxide semiconductor) and bipolar LNAs (Low Noise Amplifiers) in terms of their circuit design and the electrical circuit parameters was conducted. As partially reported [1], we have been [...]

The Effect of a Multiple Carrier Model of Interface Trap Generation on Lifetime Extraction for MOSFETs

McMahon W., Matsuda K., Lee J., Hess K., Lyding J., University of Illinois, US

An isotope effect in the slope of the substrate current versus lifetime requires a model beyond the standard single carrier lucky electron model typically used for MOSFET lifetime extrapolation. A multiple scattering model is developed [...]

Fullband Particle-Based Simulation of High-Field Transient Transport in III-V Semiconductors

Wigger S., Saraniti M., Goodnick S.M., Leitenstorfer A., Arizona State University, US

Motivated by the recent experimental measurements of Tera-Hertz radiation [1], this work presents the transient analysis of photogenerated electron-hole pairs in GaAs and InP pin diodes usinga full-band particlebased simulator. Excellent agreement is found between [...]

The Role of the Quantization Effects on the Operation of 50 nm MOSFET and 250 nm FIBMOS Devices

Vasileska D., Knezevic I., Akis R., Ferry D.K., Arizona State University, US

We investigate quantum-mechanical space quantization effects in conventional MOSFET devices and asymmetric device structure fabricated via focused ion beam technique (FIBMOS device). We find that the inclusion of the quan-tum-mechanical space-quantization effects along the growth [...]

A Systematic Search for New Scintillators using Electronic Structure Calculations

Klintenberg M., Derenzo S.E, Weber M.J., Lawrence Berkeley National Laboratory, US

A systematic study of several hundred inorganic crystal structures have been performed by means of electronic structure calculations with the goal of finding potential new scintillator materials for synthesis and testing. All X-ray or neutron [...]