US – Page 437 – TechConnect Briefs

Gain in a Semiconductor Waveguide Qubit

Harris J., Akis R., Ferry D.K., Arizona State University, US

Recently, it has been suggested that it may be possible to use combinations of coupled quantum wire waveguides to form quantum computational qubits [1],[2]. However, there are several related problems intrinsic to this approach. First, [...]

Residual Stress Modeling in Quantum Dots

Vlahovic B., Wang K., Suslov V., Yakovlev S.L., Otieno C., Soldi A., Dutta J., North Carolina Central University, US

One of the possible applications of the quantum dots is in a new generation of photovoltaic cells. Theory predicts the efficiency of these based solar cells to be up to 63 percent, which is substantially [...]

Quantum Effects in SOI Devices

Ahmed S.S., Akis R., Vasileska D., Arizona State University, US

Quantum effects have been reported to play an important role in the operation of narrow width SOI devices, in which the carriers experience a two dimensional confinement in a square quantum well at the semiconductor-oxide [...]

Electron Vorticity – Internal Energy Formulation of the Hydrodynamic Model of Electron Transport

Mohseni K., Shakouri A., University of Colorado, US

The hydrodynamic model of electron transport is revisited. By rearranging the governing equations a new set of equations in terms of the electron vorticity and internal energy is derived. The advantage of the new set [...]

Principles of Electron Wave Computing using Quantum Resistor Networks

Wu C.H., University of Missouri-Rolla, US

Quantum resistor networks are interconnected thin wires or electron conducting wave guides. A multiple input-output quantum network is capable of performing massive parallel computing, similar to optical computing. Basic logic functions and arithmetic computation have [...]

Predictive Process Simulation and Ab-initio Calculation of the Physical Volume of Electrons in Silicon

Windl W., Daw M.S., Ohio State University, US

Recently, we have presented the development of a complete predictive simulation capability for the effects of general anisotropic nonuniform stress on dopant diffusion in silicon [M. Laudon, N. N. Carlson, M. P. Masquelier, M. S. [...]

The Landauer Approach to the Critical Source-Channel Barrier in MOSFETs

Lundstrom M., Rhew J-H., Purdue University, US

A simple treatment of the nano-scale MOSFET in the spirit of the Landauer approach to transport in mesoscopic structures is described. First, the essential physics is illustrated by examining numerical simulations. Next, the analytical theory [...]

Self-consistent Modeling of Open Quantum Devices

Akis R., Shifren L., Ferry D.K., Arizona State University, US

In this paper, we describe a method of simulating electron transport in semiconductor devices that operate in the quantum regime. Specifically, devices formed in which the electrons are confined to two dimensions (2D) and transport [...]

The Use of a Green’s Function Formalism for the Simulation of Semiconductor Device Performance

Jovanovic D., Motorola, US

Non-equilibrium quantum transport simulation techniques (e.g. the generalized Kadanoff-Baym approach) have been in existence for over 40 years but have only recently become numerically viable for the simulation of semiconductor devices. This paper reports on [...]

Structural and Electronic Properties of Quantum Dot Surfaces

Galli G., Puzder A., Willilamson A.J., Grossman J.C., Pizzagalli L., Lawrence Livermore National Laboratory, US

We report on recent progress in studying the structural, electronic and optical properties of Si and Ge quantum dots, using first principles calculations. We used both ab initio molecular dynamics techniques and quantum Monte Carlo [...]