We present three-dimensional heat-transport simulation for bipolar transistors. The simulations are validated on experimental data, and are employed to develop analytical models for the thermal resistance of devices fabricated on bulk and SOI substrate, and with deep-trench isolation. The cross-heating effect in multifinger devices is also modeled.
Journal: TechConnect Briefs
Volume: 1, Technical Proceedings of the 2002 International Conference on Modeling and Simulation of Microsystems
Published: April 22, 2002
Pages: 616 - 619
Industry sector: Sensors, MEMS, Electronics
Topic: Modeling & Simulation of Microsystems