US – Page 325 – TechConnect Briefs

Effects of Scaling on Modeling of Analog RF MOS Devices

Liu Y., Cao S., Oh T.Y., Wu B., Tornblad O., Dutton R.W., Stanford University, US

This paper uses advanced TCAD tools—both IMF-based noise modeling and HB-based distortion modeling—to extract parameters of key importance in developing compact models. Additionally, the TCAD-based modeling provides insight into technology constraints that can potentially influence [...]

Modeling Small MOSFETs using Ensemble Devices

Watts J.S., Pino R., Trombley H., IBM, US

This paper discribes methodogy to correctly model small area MOSFETs including paremeter extraction and centering using multiple parallel devices for accurate measurments. The method includes adjusting the measured data to recover true single finger behavior, [...]

Device Correlation: Modeling using Uncorrelated Parameters, Characterization Using Ratios and Differences

McAndrew C.C., Drennan P.G., Freescale Semiconductor, US

Partial correlations between parameters of different types of devices, such as effective channel lengthfor PMOS and NMOS devices, are often modeled and simulated statistically via correlation coefficients.However this is cumbersome and inefficient from a modeling [...]

Recent Upgrades and Applications of UFDG

Fossum J.G., Trivedi V.P., Chowdhury M.M., Kim S-H, Zhang W., University of Florida, US

Recent upgrades of UFDG, a process/physics-based compact model for nonclassical MOSFETs having ultra-thin Si bodies (UTB), are overviewed, and several recent applications of the model are presented, exemplifying the potential benefits of FinFETs in nanoscale [...]

BSIM4 and BSIM Multi-Gate Progress

Dunga M.V., Lin C.H., Xi X., Chen S., Lu D.D., Niknejad A.M., Hu C., UC-Berkeley, US

Compact models form an integral part of any circuit design environment, ranging from analog and digital design to mixed-signal design worlds. The models need to be developed and improved in parallel with technology advancements to [...]

Compact Iterative Field Effect Transistor Model

Shur M.S., Turin V., Veksler D., Ytterdal T., Iñiguez B., Jackson W., Rensselaer Polytechnic Institute, US

Compact models for field effect transistors should satisfy two conflicting requirements. On one hand, they should be simple enough and should contain a small number of physics-based parameters to be suitable for parameter extraction. On [...]

Halo Doping: Physical Effects and Compact Modeling

Mudanai S., Rios R., Shih W-K, Packan P., Lee S-W., Intel Corp., US

As the devices are scaled to ultra short channel lengths, pocket or halo implants have been used widely to reduce DIBL and other short channel effects. Although, the use of halo implants helps with control [...]

Accuracy of Surface-Potential-Based Long-Wide-Channel MOS Transistor Compact Models

Jie B.B., Sah C-T, University of Florida, US

Frequently asked questions are addressed, “How accurate are the approximate long-and-wide-channel MOS transistors baseline models that have been used to develop the compact models for computer-aided circuit designs?” Three commonly used surface-potential (US=q*PSIS/kT) approximations of [...]

An Improved MOS Transistor Model with an Integrated Mobility Model

Hauser J.R., N.C. State University, US

A new and improved MOS I-V model will be presented using a more exact approach to include surface field dependent mobility effects. Mobility degradation effects are included in the basic I-V differential equation as opposed [...]

Theory and Modeling Techniques used in PSP Model

Gildenblat G., Li X., Wang H., Wu W., Jha A., van Langevelde R., Scholten A.J., Smit G.D.J., Klaassen D.B.M., Pennsylvania State University, US

This paper describes theoretical foundation and details of the new compact modeling techniques used in the advanced surface-potential-based compact MOSFET model PSP, jointly developed by the Pennsylvania State University and Philips Research. Specific topics include [...]