US – Page 324 – TechConnect Briefs

Analysis and Modeling of NQS Effects in MOSFET’s

Ma Y., Jeng M-C, Liang H., Liu Z., Cadence Design Systems, Inc., US

Three issues regarding NQS effect in MOSFET’s are investigated: When NQS effect becomes significant, NQS effect on channel charge partition, and its implementation in advanced MOSFET models (PSP, Hisim2 and Bsim4).Channel segmentation method [1] with [...]

TCAD-based Process Dependant HSPICE Model Parameter Extraction

Mahotin Y., Tirumala S., Lin X-W, Pramanik D., Synopsys, Inc., US

This paper describes the methodology for global extraction of HSPICE compact model parameters as explicit polynomial functions of process parameter variations (halo dosage, gate oxidation temperature etc). Electrical data required for extraction is obtained from [...]

Investigation of Substrate Current Effects and Modeling of Substrate Resistance Network for RFCMOS

Lee J.C., Anna R.B., Sweeney S.L., Pan L.H., Newton K.M., IBM Corporation, US

RF device models focus on device performance in the high frequency region, with a reasonable DC model. The substrate current (Isub) is often regarded as unimportant in the DC model and thus ignored because the [...]

BSIM Model for MOSFET Flicker Noise Statistics: Technology Scaling, Area, and Bias Dependence

Ertürk M., Anna R., Newton K.M., Xia T., Clark W.F., IBM Systems and Technology Group, US

We have implemented a statistical model for MOSFET flicker noise as an extension to BSIM. Model development methodology and hardware correlation for various types of MOSFETs from 180nm and 130nm technology nodes are presented. Given [...]

Two-Tone Distortion Modeling for SiGe HBTs Using the High-Current Model

Malladi R.R., Borich V., Sweeney S.L., Rascoe J., Newton K.M., Venkatadri S., Yang J., Chen S., IBM Systems and Technology, US

This paper examines certain aspects of the base resistance model of HiCUM (High Current Model) to address convergence problems seen during 2-tone distortion simulations of SiGe HBTs. Here, we propose some changes to the model [...]

DC and AC Symmetry Tests for MOSFET Models

McAndrew C.C., Freescale Semiconductor, US

Symmetry around Vds=0 is a critical requirement forMOSFET models, e.g. as it affects the ability of a model tosimulate accurately distortion for some RF CMOS mixers.The Gummel Symmetry Test is, until now, the standardtest used [...]

Compact Modeling of Short Channel Double-Gate MOSFETs

Lu H., Liang X., Wang W., Taur Y., Univ. California, San Diego, US

This talk presents analytical modeling of short-channel effect in double-gate MOSFETs. 2-D Poisson’s eq. is solved as a boundary value problem in subthreshold. 2-D potential distribution and subthreshold currents have been calculated and verified by [...]

Charge-storage calculation for Si-based bipolar transistors from device simulation

Tran H., UCSD, US

Various methods for calculating regional charge storage components in bipolar transistors fromdevice simulation results are compared with respect to their usefulness for compact modeling. Themethods are evaluated for Si and SiGe transistors with very different [...]

Development and Design Kit Integration of a Scalable and Statistical High Current Model for Advanced SiGe HBTs

Malladi R.M., Newton K.M., Schroter M.S., IBM Systems and Technology, US

In this invited paper, we present the methodology for advanced SiGe HBT modeling and its integration into BiCMOS design kits. We review various model choices and describe, in detail, the extraction of the High Current [...]

Compact Modeling of Spiral Inductors for RF Applications

Chen J., Liou J.J., University of Central Florida, US

Recent growth in RF applications has increased the use of spiral inductors and thus demanded a more accurate model for such devices. In this paper, we develop a compact model for spiral inductors with symmetrical [...]