US – Page 176 – TechConnect Briefs

Identification of Molecular-Mimicry-Based Ligands for Cholera Diagnostics using Magnetic Relaxation

Santiesteban O.J., Kaittanis C., Banerjee T., Santra S., Teter K., Perez J.M., University of Central Florida, US

Magnetic nanosensors (MRnS) offer multiple benefits that can be used to design sensitive and robust diagnostic tools. High sensitivity, stability, and ease of surface modification make this approach a strong contender against the more commonly [...]

Topical Sensory Nanoparticles for in vivo Biomarker Detection

Patrone J., Benkoski J., Patchan M., Calderon-Colon X., Le H., Sample J., JHU/APL, US

We have recently developed a non-toxic, topically applied biosensor using solid lipid nanoparticles (SLN). This diagnostic platform is currently designed to continuously monitor hydrogen peroxide levels in skin. Overproduction of hydrogen peroxide is implicated in [...]

Drain Induced Barrier Lowering (DIBL) Effect on the Intrinsic Capacitances of Nano-Scale MOSFETs

Karim M.A., Venugopalan S., Chauhan Y.S., Lu D., Niknejad A., Hu C., University of California at Berkeley, US

MOSFET intrinsic capacitances going negative is a major concern in the compact model community. Negative Intrinsic Capacitances (NIC) can raise non-convergence issues in circuit simulators. In some cases NICs can be explained using physical phenomena. [...]

Single-walled Carbon Nanotube (CNT) Field Effect Transistor Device Modeling

Abebe H., Cumberbatch E., USC/ISI, US

We have developed a surface potential based compact model for a single well semiconductor CNT field effect transistor. Our compact modeling results for surface potential, channel charge, gate capacitance and channel current are compared with [...]

Characterization and Modeling of Metal Finger Capacitors

Lu N., Booth R., Daley D., Thompson E., Putnam C., IBM, US

A capacitor solution with no mask or process additions can be formed by the use of interdigitated metal fingers. Often, this metal finger capacitor uses multiple back-end-of-line (BEOL) levels to increase capacitance density. Metal structures [...]

Process Variability Modeling for VLSI Circuit Simulation

Saha S.K., SuVolta, Inc., US

It is well known that the process variability has severely impacted the delay and power variability in VLSI devices, circuits, and chips, and the impact of process variability keeps increasing as MOSFET devices and CMOS [...]

Modeling of High Voltage Devices for ESD Event Simulation

Zhou Y., Salcedo J., Hajjar J.-J., Analog Devices, Inc., US

BCDMOS process technologies are key in enabling highly integrated mixed-signal application for the automotive, medical and industrial sectors. Achieving satisfactory ESD performance in high voltage mixed-signal applications requires synthesized co-design using circuit-level ESD event simulation [...]

A Fully Anlytical Model for Carbon Nanotube FETs including Quantum Capacitances and Electrostatics

Wei L., Frank D.J., Chang L., Wong H.S.P., Massachusetts Institute of Technology, US

In this paper, an analytical model of intrinsic carbon nanotube field effect transistors (CNFETs) is presented based on ballistic transport and careful analysis of the quantum capacitances, which requires neither iteration nor numeric integration. Essential [...]

Compact Models for sub-22nm MOSFETs

Chauhan Y.S., Lu D., Venugopalan S., Morshed T., Karim M.A., Niknejad A., Hu C., University of California-Berkeley, US

FinFET and UTBSOI FET (or ETSOI) are the two promising multi-gate FET candidates for sub-22nm CMOS technology. BSIM multi-gate FET models (BSIM-CMG and BSIM-IMG) are the surface potential based physical compact models for FinFET and [...]

UF “Compact” Models: A Historical Perspective

Fossum J.G., University of Florida, US

The history of the developments of “compact” models for SOI MOSFETs at the University of Florida (UF) is reviewed. The uniqueness and innovation of the UF “process-based” models are reiterated, and their global utility as [...]