JP – Page 20 – TechConnect Briefs

Synthesis, Characterization and Electrical Conductivity of Metal/Metal ion Incorporated Fullerene Nanowhiskers

Sathish M., Miyazawa K., Sasaki T., National Institute for Materials Science, Namiki, JP

It is presumed that the polymerization of fullerene molecules as nanowhiskers or nanotubes will result enhancement in the conductivity of the fullerene molecule. Our earlier studies on conductivity of fullerene nanowhiskers shows, a whisker of [...]

Study of Dynamics of R and D of CNT in Japan Based upon Viewpoints of Nanotechnology Boom and Risk Perception

Goto A., Takenaka A., Yagishita T., University of Shizuoka, JP

The public speech of President Clinton on Jan, 2000 gave a big impact on the Japan Federation of Economic Organization because the industrial development remained sluggish in Japan. Following USA, Japanese government put a large [...]

Computational Screening of Metallofullerenes for Nanoscience

Slanina Z., Nagase S., Institute for Molecular Science, JP

The objects of fullerene science - fullerenes, metallofullerenes & other fullerene endohedrals, and nanotubes - represent promising candidates for nanoscience and nanotechnology applications. The emerging concepts are illustrated on C74-based endohedrals, especially Ca@C74, Sr@C74, and [...]

Coulomb Oscillations at Room-Temperature of Single-Walled Carbon Nanotube Field-Effect Transistors

Ohno Y., Asai Y., Maehashi K., Inoue K., Matsumoto K., Osaka University, JP

Single-walled carbon nanotube field-effect transistors with thin tunnel barriers were investigated, and room-temperature single-electron transistor (SET) operation was realized. Single-walled carbon nanotubes were grown by thermal chemical vapor deposition at 820 degrees Celsius for 10 [...]

Capacitance Model for Four-Terminal DG MOSFETs

Nakagawa T., Sekigawa T., Tsutsumi T., Hioki M., O’uchi S., Koike H., National Institute of Advanced Industrial Science and Technology, JP

We present an intrinsic-capacitance model for undoped-channel full-deplete DG MOSFETs with two independent gates of different gate-oxide thickness. It includes carrier-velocity saturation, and mobility change by the surface electric-field. We considered five intrinsic capacitances Cg1s, [...]

Advanced Compact MOSFET Model HiSIM2 Based on Surface Potentials with a Minimum Number of Approximation

Miura-Mattausch M., Navarro D., Sadachika N., Suzuki G., Takeda Y., Miyake M., Warabino T., Machida K., Ezaki T., Mattausch H.J., Miura-Mattausch M., Ohguro T., Iizuka T., Taguchi M., Kumashiro S., Inagaki R., Miyamoto S., Hiroshima University, JP

The compact model HiSIM2 supports RF-circuit applications with advanced MOSFETs and is a further development of HiSIM1 which has been released since 2001 for public usage. Important features, required for the real applications, are summarized. [...]

Odor sensor using quartz crystal microbalance coated with molecular recognition membrane

Nanto H., Takei Y., Imamura T., Ishigure D., Kanazawa Institute of Technology, JP

Quartz crystal microbalance (QCM) gas sensor coated with thin molecular recognition membrane using acrylic acid, methacrylic acid or stylene are prepared using plasma-polymerized chemical vapor deposition (CVD)method. The sensor coated with acrylic acid thin film [...]

Numerical Simulation of Drain-Current Transients and Current Compression in GaN MESFETs

Takayanagi H., Itagaki K., Horio K., Shibaura Institute of Technology, JP

Two-dimensional transient analyses of GaN metal-semiconductor field effect transistors (MESFETs) are performed in which a three level compensation model is adopted for a semi-insulating buffer layer, where a shallow donor, a deep donor and a [...]

Molecular Switches of a Self-Assembling Helical Biladienone

Matsui E., Matsuzawa N.N., Moriya S., Sasaki T., Hatazawa T., Kita K., Mizutani T., Sony Corporation, JP

We report a molecular field-effect-transistor employing zinc biladienone (1) as the active element. 1 has not only a rigid disk-shaped core such as porphyrins but also a non-symmetric flexible. The operation of the new transistor, [...]

Analysis of Surface Interaction between TiO2 Fine Particles with Different Surface Modification in Isoparaffin by Using Colloid Probe AFM

Kamiya H., Suzuki M., Kikuchi M., Iijima M., Tsukada M., Tokyo University of Agriculture and Technology, JP

To control the dispersion stability of nanometer scaled fine inorganic particles in organic solvent, various kinds of surface modification on particles have been carried out. This paper focused on the surface modification on titanium oxide [...]