Japan
Country: JP
Analysis of High Average Breakdown Fields between Gate and Drain in AlGaN/GaN HEMTs with High-k Passivation Layer
AlGaN/GaN HEMTs are now receiving great interest for application to high-power microwave devices and high power switching devices. To improve the breakdown voltage, the introduction of field plate is shown to be effective, but it [...]
Analysis of Breakdown Voltage of AlGaN/GaN HEMTs with High-k Passivation Layer and High Acceptor Density in Buffer Layer
AlGaN/GaN HEMTs are now receiving great interest for application to high-power microwave devices and high power switching devices. To improve the breakdown voltage, the introduction of field plate is shown to be effective, but it [...]
Analysis of Breakdown Characteristics in Field-Plate AlGaN/GaN HEMTs: Dependence on Deep-Acceptor Density in Buffer Layer
We make a two-dimensional analysis of field-plate AlGaN/GaN HEMTs with a Fe-doped semi-insulating buffer layer, and studied how the deep-acceptor density in the buffer layer NDA and the field-plate length LFP affect the breakdown voltage [...]
Analysis of Gate-Length Dependence of Lags and Current Collapse in Field-Plate AlGaN/GaN HEMTs
We make 2-D transient simulations of field-plate AlGaN/GaN HEMTs with a semi-insulating buffer layer, where a deep acceptor above the midgap is considered. We particularly study how the gate lag, drain lag and current collapse [...]
Solvent-free Printing of Organic Semiconductor, Insulator, Metal, and Conductor Particles on Flexible Substrates
Multi-material and solvent-free printing for printed electronics is developed using toner-type patterning of organic semiconductor, insulator, metal and other con- ductor particles, and the subsequent thin-film formation by ultrasonic sintering. Although conventional toner technology was [...]
A Compact Model for SiC Junction Barrier Schottky Diode for High-Voltage and High-Temperature Applications
Navarro D., Herrera F., Miura-Mattausch M., Mattausch H.J., Miura-Mattausch M., Takusagawa M., Kobayashi J., Hara M., Hiroshima University, JP
SiC-based Junction Barrier Schottky (JBS) Diode is employed in power conversion applications because of its low-leakage current and high switching speed characteristics even at elevated temperatures. JBS structure originates from Schottky Barrier Diode (SBD) structure, [...]
Low transmission loss flexible substrates using low Dk/Df polyimide adhesives
To meet the ever-increasing requirements of transmission data with a growth in the market for information technology gadgets such as mobile phones, the transmission frequency of circuits is increased. However, the integrity of high-frequency signals [...]
Development of “fullerene composite paper” for aiming to fabricate electronic paper devices
We propose a new functional paper containing fullerenes, i.e., a “fullerene-composite paper.” Generally, a fullerene, C60, has the form of a hollow sphere by carbon. It is known that the fullerenes have high physical and [...]
Development of “paper transistors” with new structure using carbon-nanotube-composite papers for aiming to construct logic circuits
We propose new “paper transistors” with unique structure using carbon-nanotube (CNT)-composite papers for aiming to construct “paper logic circuits.” Recently, the CNT that is one of nano-carbon materials has been receiving increasing attention because it [...]