Analysis of Gate-Length Dependence of Lags and Current Collapse in Field-Plate AlGaN/GaN HEMTs

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We make 2-D transient simulations of field-plate AlGaN/GaN HEMTs with a semi-insulating buffer layer, where a deep acceptor above the midgap is considered. We particularly study how the gate lag, drain lag and current collapse in AlGaN/GaN HEMTs are influenced by the gate length and field-plate length. As a result, it is shown that the gate lag increases as the gate length becomes short, but the drain lag is not so dependent on the gate length. Then, the current collapse, which is a combined effect of gate lag and drain lag, tends to increase as the gate length becomes short due to the gate-lag effect.

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Journal: TechConnect Briefs
Volume: TechConnect Briefs 2019
Published: June 17, 2019
Pages: 454 - 457
Industry sector: Sensors, MEMS, Electronics
Topics: Informatics, Modeling & Simulation, Modeling & Simulation of Microsystems
ISBN: 978-0-9988782-8-7