Kawada Y. – TechConnect Briefs

Analysis of High Average Breakdown Fields between Gate and Drain in AlGaN/GaN HEMTs with High-k Passivation Layer

Tomita R., Ueda S., Kawada Y., Horio K., Shibaura Institute of Technology, JP

AlGaN/GaN HEMTs are now receiving great interest for application to high-power microwave devices and high power switching devices. To improve the breakdown voltage, the introduction of field plate is shown to be effective, but it [...]

Analysis of Breakdown Voltage of AlGaN/GaN HEMTs with High-k Passivation Layer and High Acceptor Density in Buffer Layer

Ueda S., Tomita R., Kawada Y., Horio K., Shibaura Institute of Technology, JP

AlGaN/GaN HEMTs are now receiving great interest for application to high-power microwave devices and high power switching devices. To improve the breakdown voltage, the introduction of field plate is shown to be effective, but it [...]

Effect of Deep-Acceptor Density in Buffer Layer on Breakdown Voltage of AlGaN/GaN HEMTs with High-k Passivation Layer

Ueda S., Kawada Y., Horio K., Shibaura Institute of Technology, JP

AlGaN/GaN HEMTs are now receiving great interest for application to high-power microwave devices and high power switching devices. To improve the breakdown voltage, the introduction of field plate is shown to be effective, but it [...]

Effects of Buffer Acceptors on Breakdown Voltages of AlGaN/GaN HEMTs with a High-k Passivation Layer

Kawada Y., Hanawa H., Horio K., Shibaura Institute of Technology, JP

AlGaN/GaN HEMTs are now receiving great interest for application to high-power microwave devices and high-power switching devices. However, the breakdown voltage is known to be greatly lower than that theoretically predicted. To improve the breakdown [...]