FR – Page 29 – TechConnect Briefs

Interconnect Modeling for High Speed Digital Circuits – the Role of RLC Coupling

Suaya R., Mentor Graphics, FR

The modelisation of capacitance and inductance of wires for timing and noise simulation of digital circuits is discussed. Different domains characterized by the length of the wires and the driving strength require different approximations in [...]

An Algorithm for the Inclusion of RC Compact Models of Packages into Board Level Thermal Simulation Tools

Rencz M., Székely V., Courtois B., TIMA-CMP, FR

The paper presents an algorithm for the co-simulation of packages, given with the RC compact models, and the printed circuit boards. This enables beyond the correct detailed consideration of the heat transfer in the board [...]

Capacitance-Voltage Characteristics of Metal-Oxide-Strained Semiconductor Si/SiGe Heterostructures

Cavassilas N., Autran J-L, CNRS, FR

We present theoretical investigation of mechanical strain-induced effects in metal-oxide-semiconductor (MOS) structures from an electrical point-of-view. In this work, we start by calculating the strained semiconductor band-structure using a k.p approach over the complete Brillouin [...]

Modeling and Simulation of Single-Electron Multi Tunnel Junction Memory

Le Carval G., Le Royer C., Le Carval G., Le Royer C., Sanquer M., Fraboulet D., CEA-LET, FR

For optimization of Quantum-Dot-based Multi Tunnel Junction Memory (MTJM) [1], we propose an original compact model validated by physical simulations. We analyze the impact of physical and technological parameters (Temperature, dots density, geometries…) on writing [...]

Behavioral Modeling of a Humidity Sensor Using an Analog Hardware Description Language

Tételin A., Lévi H., Mongellaz B., Pellet C., Laboratoire IXL, FR

Measuring relative humidity in breath is useful for diagnosing pulmonary diseases. Humidity capacitive sensors were developed to equip a portable clinical device. Simulation is needed to design an electronic interface circuit to be integrated on [...]

Numerical Modeling of Ferrofluid Flow Instabilities in a Capillary Tube at the Vicinity of a Magnet

Berthier J., Ricoul F., LETI, FR

The use of ferrofluids is now foreseen to be important for microfluidic systems and biotechnological microsystems as microvalves, micropumps or for the control and synchronization of the flow. The advantage lies in the possibility of [...]

Kinetic and Numerical Approaches to Nucleation and Growth During a First Order Phase Transition

ten Bosch A., Zhukhovitskii D.I., CNRS, FR

Novel nanostructures are created during first order phase transitions. Embryos of the new phase are formed by aggregation of particles which diffuse in the local field. Two model independent approaches to nucleation are described : [...]

Impact of Non-Stationary Transport Effects on Realistic 50nm MOS Technology

Munteanu D., Le Carval G., Guegan G., LETI, CEA/Grenoble, DMEL, FR

This paper highlights the impact of non-stationary transport on performances of deep submicron CMOS bulk technology. We present a quantitative analysis of technology influence on the needed level for carrier transport modeling (Drift-Diffusion versus Energy [...]

Bonding Pad Resistance. A Combined Approach

Bouche G., Gonella R., Sabouret E., Technology Modeling STMicroelectronics, FR

Introducing new intermetal materials, with improved electrical properties but lowered mechanical resistance, requires in terms of reliability to design new structures for pads. The test structures under fabrication have been simulated to try and evaluate [...]

Semiempirical Direct Dynamics Trajectory Study of the Si+ (2P) + H2 -> SiH+ + H Reaction

Chaâbane N., Vach H., Peslherbe G.H., CNRS-Ecole Polytechnique, FR

Silicon chemical vapor deposition (CVD) is widely used in the microelectronic industry for the production of integrated circuits. For the underlying chemical reactions, the dynamical properties of the involved Si-H compounds are of fundamental interest. [...]