Modeling and Simulation of Single-Electron Multi Tunnel Junction Memory

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For optimization of Quantum-Dot-based Multi Tunnel Junction Memory (MTJM) [1], we propose an original compact model validated by physical simulations. We analyze the impact of physical and technological parameters (Temperature, dots density, geometries…) on writing and retention characteristics of the MTJM cell, and so we show that this concept could be an alternative for Advanced DRAM Applications (for the 50 nm node predicted around 2011 by ITRS).

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Journal: TechConnect Briefs
Volume: 1, Technical Proceedings of the 2002 International Conference on Modeling and Simulation of Microsystems
Published: April 22, 2002
Pages: 502 - 505
Industry sector: Sensors, MEMS, Electronics
Topics: Modeling & Simulation of Microsystems
ISBN: 0-9708275-7-1