CN – Page 9 – TechConnect Briefs

Photocatalytic Performance of Cu/TiO2-xNx Nanotube Arrays Enhanced by Surface Plasmon Resonance and Application in Hydrogen Evolution by Water Splitting

Kang L., Liu E., Hu X., Fan J., Fan X., Wu F., Wu H., Fan J., Fan X., Hou W., Wu F., Wu H., Wang Q., Northwest University, CN

Studies revealed that noble metal (Au, Ag, Pd) nanoparticles can improve the photoresponse property of TiO2 in the visible region based on the surface plasmon resonance (SPR) effect, and enhance the activity of TiO2 photocatalyst. [...]

Epidermal Growth Factor-Ferritin H-Chain Nanoparticles as Nanocarrier of

Huang Y., Chen X., Cao X., East China University of Science and Technology, CN

The emergence of drug-resistant cancer cells together with the toxicity side effect of chemotherapy agents are the major obstacle in cancer treatment. We focused on providing a new pattern of protein-based nanoparticle as drug delivery [...]

Effects of CdTe QDs on protein structural changes

Ma X., Liang X., Liu L., Hu X., Fan J., Northwest University, CN

The nano-scale material, quantum dots (QDs), has been widely used in biological labels, imaging of fixed cells and tissues due to their excellent properties, such as small size, large surface area, good photostability, and negligible [...]

A Specific Surface-coating Peptide for Rare Earth Nanomaterials

Zhang Y.J., Zhou W., Wen L.P., University of Science and Technology of China, CN

The induction of autophagy on exposure of cells to a variety of nanoparticles represents both a safety concern and an application niche for engineered nanomaterials. Using phage display, we have discovered an 11-amino acid peptide [...]

Multi-functionalizations of Mesoporous Hollow Silica Nanospheres and Their HIFU Application

Chen H., Chen Y., Zhang K., Wang X., Chen H., Chen Y., Shi J., Shanghai Institute of Ceramics, CN

High intensity focused ultrasound (HIFU), as a representative non-invasive therapeutic mode, has attracted extensive attentions among biological and medical researchers. In this report, we focused on constructing novel mesoporous hollow silica nanospheres (MHSNs) as innovative [...]

The scavenging of reactive oxygen species and the potential for cell protection by fullerenols with different isoelectric points

Li J., Liu X., He R., Chang Y., Zhang M., Liu X., Jin J., Sun B., Zhao Y., Xing G., Chinese Academy of Sciences, CN

Fullerenols were known as the major water-soluble derivatives of fullerene that possess particular signiﬁcance biological effects such as anticancer active and free radical scavengers. We have reported a novel method for purifying nanoparticles of fullerenols, [...]

Application of Multi-frequency Test and Neural Network to Fault Diagnosis in Analog Circuits

Wang C., Wang H., Ye Y., Liang H-L, Wang C., Wang H., Mei J., He J., Chan M., PKU-HKUST Shenzhen-Hongkong Institution, CN

In this paper, the multi-frequency test and neural networks (NNs) are applied to fault diagnosis in analog circuits. The reason is that multi-frequency test can maximize differences between the failure and the normal circuit’s response, [...]

Compact Modeling of Parameter Variations of Nanoscale CMOS due to Random Dopant Fluctuation

Ye Y., Zhu Y., He H., He J., Mei J., Cao Y., He H., He J., PKU-HKUST Shenzhen-Hongkong Institution, CN

In nanoscale CMOS design, the compact modeling of random dopant fluctuation (RDF), which is the major variability source, is crucial important to bridge the variation aware design to the underlying physics. In this paper the [...]

Junctionless Nanowire MOSFET with Dynamic Threshold Voltage Operation Methodology

Mei J., Zhang A., Yu C., Ye Y., Wang H., Deng W., He J., PKU-HKUST Shenzhen-Hongkong Institution, CN

In this paper, a junctionless nanowire MOSFET with the dynamic threshold voltage operation methodology （DT-JNT） is proposed and its characteristics are studied comparing with those of a conventional junctionless nanowire transistor (JNT) and a double-gate [...]

Numerical Study on Gate-All-Around Tunneling FET with SiO2 Core and Si Shell Structure

Zhang A., Zhang L., Zhang X., Zhang A., Zhang L., Zhang X., Mei J., Zhang A., Zhang L., Zhang X., He H., He J., He H., He J., Chan M., PKU-HKUST Shenzhen-Hongkong Institution, CN

This work presents a gate-all-around tunneling FET based on SiO2 core and Si shell structure (GAA-SOI-TFET) and demonstrates its performance characteristics via the numerical simulation method. The 3-D T-CAD numerical simulations demonstrate that this new [...]