China
Improved Electric Field Decomposition Capacitance Model with 3-D Terminal and Fringe Components in Sub-28nm Interconnect
Zhang A., Li C., Liu J., He J., He X., He Y., Liu J., He J., He X., He Y., Ma G., Pan J., He J., He X., He Y., Hu G., Peking University Shenzhen Institute and PKU-HKUST Shenzhen-Hong Kong Institution, CN
In this paper, a parasitic capacitance model for a finite single three-dimensional (3-D) wire above an infinite plate in the nano-scale 3-D integrated circuit application is developed based on electric field decomposition (EFD). The capacitance [...]