CH – Page 14 – TechConnect Briefs

The Foundations of the EKV MOS Transistor Charge-Based Model

Enz C., Bucher M., Porret A.S., Sallese J.M., Krummenacher F., Swiss Center for Electronics and Microtechnology, CH

This paper presents the foundations that lead to the EKV MOS transistor compact model. It describes all the basic concepts required to derive the large-signal and smallsignal charge-based model that is valid in all modes [...]

2D Analysis of Source-to-Drain Tunneling in Decananometer MOSFETs with the Density-Gradient Model

Schenk A., Wettstein A., Swiss Fed. Inst. of Technology, CH

The density gradient method is able to reproduce the quantum-mechanical charge density in CMOS devices. Its ability to describe gate tunneling currents is still a matter of dispute. This paper presents the first 2-dimensional application [...]

Computing Excitons in V-shaped Quantum Wires Including Band-Structure and Dielectric Effects : Binding energies and polarization anisotropy of the bright A1, B1, A2 excitons

Dupertuis M.A., Oberli D.Y., Kapon E., Swiss Federal Institute of Technology-EPFL, CH

We demonstrate an efficient numerical scheme for the computation of the excitonic optical response of actual GaAs/AlGaAs quantum wire structures including a large set of relevant effects; structural, valence band-mixing, dielectric and many-body effects can [...]

Moment-based Analysis of Mechanical Effects on Trench-Hall Devices

Taschini S., Korvink J.G., Baltes H., ETH Zürich, CH

This paper presents a novel method for the assessment of mechanical effects on trench-Hall devices based on a moment expansion combined with two-dimensional finite-element discretization. Analogously to plate theories, a truncated moment expansion of the [...]

Towards Predictive TCAD and Fab Integration

Fichtner W., Swiss Federal Institute of Technology, CH

This paper gives an overview of the status of technology computer-aided design (TCAD) as it is used today for research, development and manufacturing projects in the micro- and opto-electronics industry. While the accurate and physics-based [...]

Thermal Management of Micro-Hotplates using MEMCAD as Simulation Tool

Briand D., Grétillat M.-A., van der Schoot B., de Rooij N.F., Institute of Microtechnology, CH

In this paper we report on the electrothermal simulations performed in the aim of optimising the power consumption and the temperature distribution of micro-hotplates for gas sensing applications. The micro-hotplate designs were optimised using the [...]

A Comparison of the Behavioral Characteristics of Miniature Gas Flow Sensors

Cousseau P., Dubochet O., Lerch Ph., Renaud Ph., Swiss Federal Institute of Technology, CH

This paper presents a comparison of three different designs for a miniature gas flow sensor operating on the thermal transfer principle, the standard silicon nitride membrane device and two plastic designs. The goal of this [...]

Modeling of FlowFET Characteristics

Leung Ki Y.-S., Schasfoort R.B.M., Sclautmann S., Renaud Ph., van den Berg A., EPFL, CH

Classical electrokinetic theory demonstrates that modu-lation of the z-potential at the shear plane can alter both the magnitude and direction of Electroosmotic Flow (EOF) induced in a microchannel at low driving field strengths. In the [...]

Nonlinear Analysis of Electrostatic Actuation in MEMS with Arbitrary Geometry

Taschini S., Baltes H., Korvink J.G., ETH-Hoenggerberg, CH

We present an explicit formulation for the Jacobian (or tan-gent) matrix of the discretized non-linear model for a cou-pled electromechanical system. The Jacobian matrix, consisting of the derivatives of the residual, is needed in Newton-Raphson-based [...]

Two-Dimensional Simulation of Scanning Capacitance Microscopy Measurements of Arbitrary Doping Profiles

Ciampolini L., Ciappa M., Malberti P., Fichtner W., Swiss Federal Institute of Technology, CH

Accurate prediction of doping distributions in modern VLSI devices (e.g. shallow junctions) with TCAD tools represents a major challenge which requires the process simulation models to be accurately tuned on the basis of two-dimensional dopant [...]