Ciampolini L., Ciappa M., Malberti P., Fichtner W.
Swiss Federal Institute of Technology, CH
Keywords: 2D carrier profiling, device simulation, scanning capacitance microscopy, ultrashallow junctions
Accurate prediction of doping distributions in modern VLSI devices (e.g. shallow junctions) with TCAD tools represents a major challenge which requires the process simulation models to be accurately tuned on the basis of two-dimensional dopant profile measurements. Scanning capacitance microscopy is a scanning probe based technique which provides images with spatial resolution in the 10 nm range. The extraction of quantitative doping information from the raw experimental data requires a calibration procedure. Presently, most of the results are obtained either with a large reverse simulation effort or with a first-order data inversion procedure (direct inversion). The current assumption of the latter approach is thequasi-uniformity ofthe doping profile. The scope of the present paper is to investigate the limits of this simplified approach by two-dimensional simulations of SCM measurements.
Journal: TechConnect Briefs
Volume: Technical Proceedings of the 2000 International Conference on Modeling and Simulation of Microsystems
Published: March 27, 2000
Pages: 48 - 51
Industry sector: Sensors, MEMS, Electronics
Topic: Modeling & Simulation of Microsystems
ISBN: 0-9666135-7-0