AT – Page 3 – TechConnect Briefs

Fabrication Process of 3D-photonic crystals via UV-Nanoimprint Lithography

Glinsner T., Lindner P., Mühlberger M., Bergmair I., Schöftner R., Hingerl K., EV Group, AT

UV-based Nanoimprint Lithography (UV-NIL) offers several decisive technical advantages concerning overlay alignment accuracy, simultaneous imprinting of micro- and nanostructures and tool design. A variety of potential applications has been demonstrated by using Nanoimprint Lithography (e.g. [...]

Analog Compact Modeling for a 20-120V HV CMOS Technology

Seebacher E., Posch W., Molnar K., Huszka Z., austriamicrosystems AG, AT

In this paper we discuss state of the art and new developments of analog modeling for HV CMOS technologies. We will give a detailed overview about the full characterization of a 0.35um high voltage process [...]

A Generic Scientific Simulation Environment for Multidimensional Simulation in the Area of TCAD

Heinzl R., Spevak M., Schwaha P., Grasser T., Institute for Microelectronics, AT

We will resented a completely generic scientific environment suitable for thearea of TCAD. Therewith it is possible for scientists to use a completetopological and numerical environment to develop applications with minimumoverhead or great knowledge of [...]

Comparison of Roughness Measurements Between a Contact Stylus Instrument and an Optical Measurement Device Based on a Color Focus Sensor

Danzl R., Helmli F., Scherer S., Alicona Imaging GmbH, AT

The determination of the roughness of technical surfaces plays an important role in scientific and industrial applications. Traditionally, the ISO conform determination of the roughness of a technical surface has been calculated using contact stylus [...]

Electrical and Optical Nanosensors

Koeck A., Hainberger R., Heer R., Kast M., Maier T., Stepper C., ARC Seibersdorf Research GmbH, AT

Electrical and optical nanosensors for biomedical diagnostics and biochemical analytics are developed. The electrical and optical nanosensors employ nanobelt, nanowire and nanogap structures fabricated on silicon-on-insulator (SOI) wafers. In SOI wafers, a thin silicon layer [...]

Biomolecular diagnostics by a magnetic lab-on-a-chip

Brückl H., Eggeling M., Heer R., Nöhammer C., Schotter J., ARC Seibersdorf Research GmbH, AT

Compared to the established fluorescent labeling method, the use of magnetic markers in biochip sensors has important advantages with respect to the detection of biomolecules at low concentrations. Additionally, the direct availability of an electronic [...]

Three-Dimensional Transient Electro-Thermal Interconnect Simulation for Stress and Electromigration Analysis

Holzer S., Hollauer Ch., Ceric H., Wagner S., Entner R., Langer E., Grasser T., Selberherr S., Vienna University of Technology, AT

We introduce the combination of three-dimensional transient electro-thermal interconnect simulations for intrinsic thermo-mechanical stress problems. In order to study the development of thermal stresses we use a finite element simulator for the investigation on stresses [...]

Vertically Grown Coaxial Double Gate Carbon Nanotube Field Effect Transistors for Tera Level Integration

Pourfath M., Gehring A., Cheong B.H., Park W.J., Kosina H., Selberherr S., Vienna University of Technology, AT

Vertically grown carbon nanotubes have the potential for tera-level Integration. However, the well-known ambipolar behavior limits the performance of carbon nanotube field effect transistors. In this work we demonstrate that a double gate structure effectively [...]

Impact of Multi-Trap Assisted Tunneling on Gate Leakage of CMOS Memory Devices

Entner R., Gehring A., Kosina H., Grasser T., Selberherr S., TU Vienna, AT

In this work a new approach for modeling gate leakage currents for memory cells which are highly degraded is proposed. In thicker dielectrics which are subject to high field stress and can therefore have a [...]

Simulation of Dynamic NBTI Degradation for a 90nm CMOS Technology

Wittmann R., Puchner H., Hinh L., Ceric H., Gehring A., Selberherr S., Vienna University of Technology, AT

The NBTI degradation was systematically investigated for a 90nm p-MOSFET by simulation and experiment. The reaction-diffusion model was extended for NBTI simulations at arbitrary gate voltage, frequency, and duty cycle within a calibrated range. Long-time [...]