Semiconductor Device Modeling – TechConnect Briefs

Modelling an NMR Probe for Magnetometry

Boero G., Schlaefli D., Besse P.A., Popovic R.S., Swiss Federal Institute of Technology, CH

A model of an NMR magnetometer probe head, based on the Bloch equations, has been developed and implemented in a C-program. The program permits to simulate pulsed and continuous wave NMR experiments with a probe [...]

A New Analytical Energy Relaxation Time Model for Device Simulation

Palankovski V., Kosina H., Hernandez A., Selberherr S., TU Vienna, AT

We present an empirical model for the electron energy relaxation time. It is based on Monte-Carlo simulation results and is applicable to all relevant diamond and zinc-blende structure semiconductors. The energy relaxation times are expressed [...]

Impact of Heat Source Localization on Conduction Cooling of Silicon-on-Insulator Devices

Sverdrup P.G., Ju Y.S., Goodson K.E., Stanford University, US

The temperature rise in compact silicon devices is strongly underestimated at present by simulations using conventional heat diffusion theory, which is based on the Fourier heat conduction law. This problem is particularly important for devices [...]

Offset Analysis in CMOS Magnetotransistors by Numerical Simulation

Metz M., Baltes H., ETH Zürich, CH

Signal offset in magnetotransistors is for the first time analyzed by numerical simulation. Offset needs to be mini-mized to improve the accuracy of low cost CMOS contact-less angle detection systems. The offset is an unwanted [...]

Simulation of the Frequency Limits of SiGe HBTs

Geßner J., Schwierz F., Mau H., Nuernbergk D., Roßberg M., Schipanski D., Technische Universitat Ilmenau, DE

The dynamic performance of SiGe HBTs in terms of the cut off frequency and the maximum frequency of oscillation is investigated by numerical device simulation. Simulations based on both the Drift Diffusion Model and the [...]

Closed-Loop MOSFET Doping Profile Optimization for Portable Systems

Stockinger M., Strasser R., Plasun R., Wild A., Selberherr S., TU Vienna, AT

We present a new closed-loop simulation-based optimization process for a 100 nm MOSFET for portable systems such as subscriber units for wireless communications, yielding an almost double drive performance at equivalent stand-by power when compared [...]

Three-Dimensional Multi-Grid Poisson Solver for Modeling Semiconductor Devices

Wigger S.J., Saraniti M., Goodnick S.M., Arizona State University, US

In this paper, a full three-dimensional (3D), inhomogenous linear multi-grid Poisson solver is presented for application in particle-based simulation tools for devic emodeling. This algorithm represents the first such fully 3D multi-grid solver for device [...]

Simulation of the Piezo-Tunnel Effect

Friedrich A.P., Besse P.A., Bächtold M., Popovic R.S., Swiss Federal Institute of Technology of Lausanne, CH

We present a new model of the piezo-tunnel effect in a heavily doped silicon p-n junction. Our approach is based on the coupling of a strain-dependent description of the energy exterma in the valence and [...]

A Predictive Length-Dependent Saturation Current Model Based on Accurate Threshold Voltage Modeling

Lim D., Lim K.Y., Zhou X., Lim D., Lim K.Y., Nanyang Technological University, SG

This paper presents a compact length-dependent saturation current (Idsat) model for deep-submicron MOSFETs based on accurate modeling of the threshold voltabe (Vth). The proposed unified model has considered all the important two-dimensional (2-D) short-channel effects, [...]

Structure Optimization of 140 GHz Pulsed-Mode IMPATT Diode

Zemliak A., Celaya C., Garcia R., Puebla Autonomous University, MX

On the basis of an IMPATT diode complex mathematical model and an optimization procedure, results are presented for a diode structure analysis and optimization suitable for a pulsed-mode 2 mm silicon diode. The complex model [...]

Implementation of Strain Induced Effects in Sensor Device Simulation

Matsuda K., Kanda Y., Naruto University of Education, JP

Device simulation technique is applied to the piezoresistive sensor by including the doping profile and the strain distribution in the silicon substrate. In this simulation, the device equations are solved by Newton's method taking into [...]

Self Aligned Gate JFETs for Smart MEMS

Amon S., Vrtacnik D., Resnik D., Krizaj D., Aljancic U., Levstek A., University of Ljubljana, SI

Self Aligned Gate JFET (SJFET) devices and circuits are reported. The problem of electrical isolation between devices on the same chip is realized through Self Aligned Gate approach, enabling the application of standard bipolar discrete [...]

Measuring and Characterizing Sub-Micron Short Channel LDD MOSFETs

Liu P.C., Lin H., Nanyang Technological University, SG

An efficient model for accurate predication of the I-V characteristics of submicrometer LDD MOSFET is described in this paper. The model is based on n-th power law model[1] by treating the effective electrical channel length [...]

Modelling High Built-In Electric Field Effects on Generation-Recombination Rates in Space-Charge Regions of pn a-Si:H Junctions

Furlan J., Gorup Z., Smole F., Topic M., University of Ljublijana, SI

A theoretical model of lateral transport of charge carriers in pn a-Si:H junctions with high built-in electric fields is proposed in which the transport of carriers is treated in a similar way to capture-emission transitions [...]

An Analytical Field Effect Mobility Model of N- and P-Channel Poly-Si TFTs

Kung J., National Lienho College of Technology and Commerce, TW

An analytical mobility model of the polysilicon (Poly-Si) TFT is important for the design and analysis of display arrays. These transistors can be used both as switching and driving components. Jacunski et al. [1] used [...]

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