An Analytical Field Effect Mobility Model of N- and P-Channel Poly-Si TFTs


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An analytical mobility model of the polysilicon (Poly-Si) TFT is important for the design and analysis of display arrays. These transistors can be used both as switching and driving components. Jacunski et al. [1] used an empirical model to explain the mobility behavior of n-channel Poly-Si TFTs. However p-channel devices and the mobility deterioration at large gate to source biases have not been emphasized. We consider that the scattering of Poly-Si TFTs occurs due to defects present in the grain interior, and at grain boundaries, and surface roughness.

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Journal: TechConnect Briefs
Volume: Technical Proceedings of the 1999 International Conference on Modeling and Simulation of Microsystems
Published: April 19, 1999
Pages: 447 - 448
Industry sector: Sensors, MEMS, Electronics
Topic: Modeling & Simulation of Microsystems
ISBN: 0-9666135-4-6