Matsuda K., Kanda Y.
Naruto University of Education, JP
Keywords: device simulation, impurity, PDE, piezeresistance, sensor, stress
Device simulation technique is applied to the piezoresistive sensor by including the doping profile and the strain distribution in the silicon substrate. In this simulation, the device equations are solved by Newton’s method taking into account the anisotropic mobilities of carriers induced by strain, which results in afecting the change of the carriers concentrations at each node. Simulation is done through an algorithm devel-oped in ‘SGFramework’. Modeling of the implementation of strain induced effects in the device simulation is shown and its feasibility is discussed.
Journal: TechConnect Briefs
Volume: Technical Proceedings of the 1999 International Conference on Modeling and Simulation of Microsystems
Published: April 19, 1999
Pages: 431 - 434
Industry sector: Sensors, MEMS, Electronics
Topic: Modeling & Simulation of Microsystems
ISBN: 0-9666135-4-6