, Hampton, M.J.
, Retterer, S.T.
, Samulski, E.T.
, Templeton, J.L.
, Williams, S.S.
, The University of North Carolina at Chapel Hill, US
The Pattern Replication In Non-wetting Templates (PRINT) technique has been extended to patterning of isolated features as well as embossed films of sub-500 nm “hard” inorganic oxides and nanocrystalline semiconductors including TiO2, SnO2, ZnO, ITO, [...]
, Li, J.
, Mahapatra, D.P.
, McDaniel, F.
, Neogi, A.
, Rout, B.
, Sahu, G.
, Singh, A.
, University of North Texas, US
UV light emission comparable to GaN based semiconductor is observed from gold-implanted Si (100) semiconductors. A low energy Au implant forming the Si nanoparticles or quantum dots are been irradiated and recrystallized by a MeV [...]
This paper deals with the prove of concept of an highly selective gas sensor based on CNTFETs which exploits the extremely sensitive change of the Schottky barrier heights between SWCNTs and metal electrodes. Specifically, the [...]
An effective approach for describing the electronic structure of InGaAs/GaAs quantum dots (QDs) is presented. We model QDs based on a single sub-band approach with an energy dependent electron effective mass. The model assumes that [...]
Analysis of the constant-voltage scaling characteristics of Fully-Depleted Castellated Gate (FDCG) MOSFETs reveals near term opportunities for these devices as the replacement for the “thick oxide” I/O device in CMOS System-On-A-Chip (SoC) technologies (e.g. the [...]
The magnitude of the intrinsic parameter fluctuations, such as process-variation and random dopant fluctuation, steadily increase with the reduction of device dimensions, and lead to pronounced component mismatch in area constrained circuits such as static [...]
Combining the operational principle of the tunneling field effect transistor with the idea of a multigate channel control appears as an attractive option to avoid unwanted shortchannel effects in nanometer-scale MOS-devices. This motivated us to [...]
In this article we report experimental evidence of plasmon based enhancement of an InGaN/GaN MQW system using Au nanocrystals. Enhancement of the main peak along with a blue-shift and change in the angle dependent PL [...]
, Chan, P-Y.
, Fikiet, J.
, Gogna, M.
, Heller, E.
, Jain, F.
, Karmakar, S.
, Miller, B.
, Suarez, E.
, University of Connecticut, US
This paper describes using wide energy gap lattice-matched II-VI layers, such as ZnSeTe- ZnMgSeTe, serving as a high-k gate dielectric for n-channel enhancement mode InGaAs field effect transistors (FETs). The thrust is to reduce interface [...]
In this paper, we for the first time investigate the random-dopant-induced device DC, the gate capacitance, the timing, and the high frequency characteristics fluctuations in nanoscale LAC devices. The conventional LAC device with higher channel [...]
The technique employed here to describe the three dimensional electrostatic field in a nano-scale CMOS n-channel FET near the threshold of conduction is using SPICE to solve the electrostatic equations. An atomistic solution will be [...]
For nano-CMOS device design, the device with multiple-fin structure has the superior short channel effect (SCE), high driving current and has been considered as an index as potential candidates. The feasibility of various multi-fin options [...]
Casimir forces originating from vacuum fluctuations of the electromagnetic fields are of increasing importance in many scientific and technological areas. The manifestations of these long-range forces at the nanoscale have led to the need of [...]
This paper presents that the sensitivity of Schottky barrier silicon nanowires FET (SB-SiNWFET) is strongly modulated by the applied back gate voltage, and reveals that the operation in the subthreshold regime gives the significant enhancement [...]
Doping CNTs is an attractive alternative to control the electronic conductivity of CNTs independent of their diameter. Highly conducting nanotubes are of interest for applications in transparent thin film electrodes. When doping CNTs through substitution [...]
In this paper, a semi-classical one-dimensional electron fluid model for carbon nanotube interconnects is built which is based on a classical two-dimensional electron fluid theory taking into account electron-electron repulsive forces, which are significant in [...]
In this work, visible electroluminescence (EL) from aluminum nitride (AlN) thin films containing aluminum nanocrystals (nc-Al) prepared by a radio frequency sputtering technique is reported. The yellow EL shows a spectrum peaked at 565 nm. [...]
ChiralMEM is a new approach to higher density magnetic random access memory for information technology [1-3]. It is based on memory cells capable of storing multiple bits of information per cell in contrast to the [...]
A new design module using an excimer irradiation to assist in micro-electroremoval process as a precise recycle modus for the digital paper of the touch-panel offers a faster per-formance in removing the Indium-tin-oxide thin-films from [...]
We describe here a new paradigm for computation and computer design that has the potential for performance many orders of magnitude higher than conventional digital computers, especially for large-scale simulation of complex systems. The paradigm [...]
The presentation will cover applications that I am developing for nanoscale hysteretic resistance materials (i.e. memristors) in pattern recognition circuitry as well as potential applications in robotics and artificial intelligence. Topics will include discussion of [...]
We produce an mercury-free, high efficiency HID lamp with the GaN nanostructure enhancer embedded. These dense GaN nanowires embedded into the HID electrodes can reduce 25% of ignition voltage and enhance the 17% of efficiency [...]
, Qi, J.
, Ye, N.
, Zhang, Q.
, Zhang, Y.
, University of Science and Technology, Beijing, CN
In summary, we demonstrate the ZnO nanotetrapod synthesized by a simple vapor phase transport process can be good field emission emitters. The field emission measurement as-synthesized materials reveal that these samples have low turn-on field [...]
, Huang, C.
, Lai, T.
, Tsou, C.
, Wu, C.
, Feng Chia University, TW
Today’s liquid crystal displays (LCDs) have to achieve more brightness and better uniformity in a thinner package, especially for the large-sized LCD panels with direct-type LED backlight system. Different reflective and transmissive characteristics managed by [...]
Recently, the nonlinear dielectric property of BST thin films has been investigated for the development of frequency agile RF and highper formance microwave tunable devices, which include phase shifters, tunable filters, steerable antennas, varactors, and [...]
Journal: TechConnect Briefs
Volume: 1, Nanotechnology 2009: Fabrication, Particles, Characterization, MEMS, Electronics and Photonics
Published: May 3, 2009
Industry sectors: Advanced Materials & Manufacturing | Sensors, MEMS, Electronics
Topicss: Nanoelectronics, Photonic Materials & Devices