Characteristic Variability of Novel Lateral Asymmetry Nano-MOSFETs Due to Random Discrete Dopants

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In this paper, we for the first time investigate the random-dopant-induced device DC, the gate capacitance, the timing, and the high frequency characteristics fluctuations in nanoscale LAC devices. The conventional LAC device with higher channel doping concentration near the source-end may suffer from larger variations from random dopant effect. An inverse lateral asymmetry doping profile (inLAC) is therefore proposed and implemented to examine their fluctuation resistant to random dopant fluctuation. The Vth fluctuation for the proposed inverse lateral asymmetry doping profile device is 1.6 times smaller than the conventional LAC device because of the smaller fluctuation of carrier injection and thus a smaller current variation for dopants located near the drain-end of the channel. We also compare the gate capacitance and high frequency characteristic fluctuations including the circuit gain, the 3db bandwidth, and the unity-gain bandwidth, for the explored devices, where the fluctuations of the gate capacitance, the circuit gain, the 3db bandwidth, and the unity-gain bandwidth for the near drain-end are 2.1, 1.7, 1.9, and 1.1 times smaller than those cases near-drain-end. The asymmetry sketch of discrete dopants in source- and drain-end investigated in this study, consequently, may benefit the design of fluctuation resistance device and circuit.

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Journal: TechConnect Briefs
Volume: 1, Nanotechnology 2009: Fabrication, Particles, Characterization, MEMS, Electronics and Photonics
Published: May 3, 2009
Pages: 602 - 605
Industry sectors: Advanced Materials & Manufacturing | Sensors, MEMS, Electronics
Topics: Nanoelectronics, Photonic Materials & Devices
ISBN: 978-1-4398-1782-7