The technique employed here to describe the three dimensional electrostatic field in a nano-scale CMOS n-channel FET near the threshold of conduction is using SPICE to solve the electrostatic equations. An atomistic solution will be demonstrated that shows the local variations in potential due to the electrostatic charge of discrete dopant atoms. This will be applied to a dual gated or fin type MOSFET device structure. It will be demonstated that conduction in nanoscale devices occurs not a a uniform sheet of charge but rather as a number of narrow “percolation” or “filamentary” channels.
Journal: TechConnect Briefs
Volume: 1, Nanotechnology 2009: Fabrication, Particles, Characterization, MEMS, Electronics and Photonics
Published: May 3, 2009
Pages: 606 - 608
Industry sectors: Advanced Materials & Manufacturing | Sensors, MEMS, Electronics
Topicss: Nanoelectronics, Photonic Materials & Devices