Papers – Page 4 – TechConnect Briefs

Simulation of Lags and Current Collapse in Field-Plate AlGaN/GaN HEMTs with Deep Acceptors in a Buffer Layer

Noda N., Horio K., Shibaura Institute of Technology, JP

Two-dimensional transient analysis of field-plate AlGaN/GaN HEMTs is performed in which a deep acceptor is considered in a semi-insulating buffer layer, and quasi-pulsed current-voltage curves are derived from them. It is studied how the existence [...]

Simulation of Current Slump Removal in Field-Plate GaAs MESFETs

Nomoto A., Satoh Y., Horio K., Shibaura Institute of Technology, JP

Two-dimensional transient analysis of field-plate GaAs MESFETs is performed by considering surface states in the region from the gate toward the drain. Quasi-pulsed current-voltage curves are derived from the transient characteristics. It is shown that [...]

Simulation of High-k Passivation-Layer Effects on Breakdown Voltage in AlGaN/GaN HEMTs

Hanawa H., Satoh Y., Horio K., Shibaura Institute of Technology, JP

A two-dimensional analysis of breakdown characteristics in AlGaN/GaN high-electron-mobility transistors (HEMTs) is performed by considering a deep donor and a deep acceptor in a buffer layer. The dependence of an off-state breakdown voltage on the [...]

Time-Domain Monte-Carlo and Noise Analysis of MAPS Sensors

Jankowski M., Napieralski A., Lodz University of Technology, PL

A non-typical approach to extended simulational analysis for monolithic active pixel (MAPS) based binary pixel readout circuits is presented. Circuit solutions and simulation results are presented and discussed. Applications of particle detection/tracking are quite wide, [...]

High-voltage Edge-rounded Adjustable Trapezoidal Waveform Generators

Jankowski M., Napieralski A., Lodz University of Technology, PL

An approach to design low-voltage and high-voltage trapezoidal waveform generators with edge-rounding ability is described. The paper presents circuits able to produce edge-rounded trapezoidal waveforms, endowed with several means of waveform parameter adjustments. Signal paths [...]

Month: June 2015

Simulation of Lags and Current Collapse in Field-Plate AlGaN/GaN HEMTs with Deep Acceptors in a Buffer Layer

Simulation of Current Slump Removal in Field-Plate GaAs MESFETs

Simulation of High-k Passivation-Layer Effects on Breakdown Voltage in AlGaN/GaN HEMTs

Time-Domain Monte-Carlo and Noise Analysis of MAPS Sensors

High-voltage Edge-rounded Adjustable Trapezoidal Waveform Generators

Threshold Voltage Model of Hetero Gate Dielectric-Dual Material Gate-GAA-Tunnel FET

The Heat transfer in Fin-FET transistor

Modeling the effect of the increase in the actuation voltage on the dynamic behavior of a RF MEMS switch

Novel Nanoeletromechanical Switches for VLSI Power Integrity Improvement

Application of Dual-Phase-Lag Model for Thermal Analyses of Electronic Nanostructures