Papers – Page 5 – TechConnect Briefs

Modeling of Electromagnetic Phenomena Inside Modern Integrated Semiconductor Structures

Zubert M., Jankowski M., S. Nowak P., Raszkowski T., Samson A., Napieralski A., Lodz University of Technology, PL

The modeling and simulation of electromagnetic phenomena can be useful in modern ICs. This is an important issue, because of the direction of development of new semiconductor technologies. The distance between devices constantly decreases, while [...]

Nanoelectronic Structural Information with Scanning Probe Microscopes

Kopanski J., You L., Ahn J.J., Obeng Y., National Institute of Standards and Technology, US

Scanning probe microscopes (SPMs) have remarkable sensitivity to the surface. The atomic force microscope (AFM) can measure surface topography and the scanning tunneling microscope (STM) can interrogate the electrical density of states, both with atomic [...]

Acetylcholine Repairs the Amyloid-beta Damage on Brain Circuitry and Memory Loss From a “Mutated Biomimetic Acetylcholinesterase” Neuronal Memcapacitor During Slow-Wave Sleeping

Thornton J., Mulchi Jr. C., Kissinger P.T., Chen E.T., Advanced Biomimetic Sensors, Inc., US

Amyloid-beta (A) plaque accumulation in the brain has been recognized to be associated with Alzheimer’s. Using artificial neuronal devices under controlled conditions, step-by-steps mimicking the A damages to neuronal circuitry is desirable, because of convenience [...]

Impact of High-k gate oxide on intrinsic device Performance of Junctionless Transistor (JLT)

Borse H.S., Jawake A.V., Aher S.R., Bhosale K.S., Patil G.C., Patil S.R., Patil G.C., Patil S.R., Bormane D.S., JSPM’s Rajarshi Shahu College of Engineering, IN

Junctionless transistor (JLT) attracts the researchers due to its advantages over conventional MOSFET’s namely high scalability, simple process flow, and low thermal budget. However, scaling of JLT below 20 nm regime results increase in off [...]

A Novel Dual-K Spacer Double Gate Junctionless Transistor for Digital Integrated Circuits

Patil G.C., Patil S.R., Patil G.C., Patil S.R., Borse H.S., Bhosale K.S., Jawake A.V., Aher S.R., JSPM’s Rajarshi Shahu College of Engineering, IN

Recently, junctionless transistors (JLT) have attracted the attention of researchers due to simple fabrication flow and reduced short channel effects. Further, due to better gate control double gate JLT (DGJLT) seems to be a promising [...]

A Novel GaAs-on-Si MOSFET for Analog Integrated Circuits

Jawake A.V., Aher S.R., Borse H.S., Bhosale K.S., Patil G.C., Patil S.R., Patil G.C., Patil S.R., JSPM’s Rajarshi Shahu College of Engineering, IN

Over the last few decades silicon has proven its superiority in the semiconductor world with respect to properties like small mass, good carrier capability, low cost, maximum wafer diameter etc. However, since on-state drive current [...]

Optimized FFT QCA Implementation using Five-input Majority Gate

Akeela R., Santa Clara University, US

Presenting novel designs for a Ripple Carry Adder, a Subtractor, and a Pipelined Array Multiplier using the Five-input Majority Gate (MAJ5) in Quantum-dor Cellular Automata (QCA). These designs are then used to implement the Fast [...]

Impact of Gate Oxide Thickness and Channel Thickness on DC Performance of Carbon Nanotube Tunnel FET

Bhosale K.S., Jawake A.V., Aher S.R., Borse H.S., Patil G.C., Patil S.R., Patil G.C., Patil S.R., JSPM’s Rajarshi Shahu College of Engineering, IN

The scaling down of conventional complementary metal–oxide–semiconductor technology is suffering from fundamental limitations. To overcome these problems, novel engineering solutions like improving the device architecture,introducing materials into the channel region with superior transport properties, and [...]

Fabrication and characterization of quantum dots with carbon nanotube-molecule heterojunctions

Hida A., Ishibashi K., RIKEN, JP

We have used single-wall carbon nanotube (SWCNT)/molecule heterojunctions to fabricate quantum structures. In one example, three different SWCNTs were connected in series with collagen model peptide molecules between them. We expect the molecule work as [...]

Nanobiomimetic Memcapacitor Memory Devices Identify Circadian Rhythm Dysfunction and Predict Early Signs of “Epilepsy” Using Reentrant Energy-Sensory Images

Chen E.T., Thornton J., Mulchi Jr. C., Advanced Biomimetic Sensors, Inc., US

Circadian Rhythm (CRR) dysfunction of Alzheimer’s has been recognized as an early sign in correlation with -Amyloid (A) damage late happened in the brain. We report a nanostructured memcapacitor memory device for detecting an energy [...]