Nomoto A., Satoh Y., Horio K.
Shibaura Institute of Technology, JP
Keywords: current slump, field plate, GaAs FET, surface state
Two-dimensional transient analysis of field-plate GaAs MESFETs is performed by considering surface states in the region from the gate toward the drain. Quasi-pulsed current-voltage curves are derived from the transient characteristics. It is shown that drain lag and current slump due to surface states are reduced by introducing a field plate longer than the surface-state region. Dependence of drain lag, gate lag and current slump on the field-plate length and SiO2 passivation layer thickness is studied, indicating that the lags and current slump can be completely removed in a case with a thin SiO2 layer.
Journal: TechConnect Briefs
Volume: 4, Advanced Manufacturing, Electronics and Microsystems: TechConnect Briefs 2015
Published: June 14, 2015
Pages: 270 - 273
Industry sectors: Advanced Materials & Manufacturing | Sensors, MEMS, Electronics
Topic: Informatics, Modeling & Simulation
ISBN: 978-1-4987-4730-1