Two-dimensional transient analysis of field-plate AlGaN/GaN HEMTs is performed in which a deep acceptor is considered in a semi-insulating buffer layer, and quasi-pulsed current-voltage curves are derived from them. It is studied how the existence of the deep acceptor and the field plate affects buffer-related drain lag, gate lag and current collapse. It is shown that the drain lag is reduced by introducing a field plate, because electron injection into the buffer layer is weakened by it, and the trapping effects by the deep acceptor are reduced. It is also shown that the current collapse and gate lag are reduced in the field-plate structure. The dependence on SiN passivation layer thickness is also studied, suggesting that there is an optimum thickness of SiN layer to minimize the buffer-related current collapse and drain lag in AlGaN/GaN HEMTs.
Journal: TechConnect Briefs
Volume: 4, Advanced Manufacturing, Electronics and Microsystems: TechConnect Briefs 2015
Published: June 14, 2015
Pages: 274 - 277
Industry sectors: Advanced Materials & Manufacturing | Sensors, MEMS, Electronics
Topic: Informatics, Modeling & Simulation