TechConnect Proceedings Papers
Month: June 2008
Modeling and simulation of a monolithic self-actuated microsystem for fluid sampling and drug delivery
A novel MEMS-based microsystem including microneedle array with a self-actuated structure for fluid sampling and drug delivery is modeled, designed and simulated. The self-actuating mechanism and the microneedle array are able to be fabricated on [...]
From MEMS to NEMS: Modelling and characterization of the non linear dynamics of resonators, a way to enhance the dynamic range
Kacem N., Hentz S., Fontaine H., Nguyen V., Delaye M.T., Blanc H., Robert P., Legrand B., Buchaillot L., Driot N., Dufour R., CEA, FR
In order to compensate the loss of performances when scaling sensors down to NEMS, a process, characterization methods and above all an original analytical model including main sources of nonlinearities are presented. The permanent quest [...]
High-Frequency Characteristic Optimization of Heterojunction Bipolar Transistors
In this paper, an optimization technique (so-called the geometric programming) is employed to optimize the base doping and Ge-dose for SiGe HBTs with high cut-off frequency and base-collector current gain. This work first formulates Kroemer’s [...]
Linearity Performance Enhancement of DMG AlGaN/GaN High Electron Mobility Transistor
Kumar S.P., Agrawal A., Chaujar R., Gupta M., Gupta R.S., Gupta M., Gupta R.S., Semiconductor Device Research Laboratory, IN
HEMTs are promising devices for RF wireless communications. For wireless communication applications and RF circuit design, linearity is always one of the most important issues. This is because the devices used in the system may [...]
Pre-Distortion Assessment of Workfunction Engineered Multilayer Dielectric Design of DMG ISE SON MOSFET
To overcome miniaturization roadblock, innovative architectural enhancements involving the use of an improved SOI like architecture called Silicon On Nothing (SON) capable of SCE and DIBL suppression onto the existing ISE devices [2], has been [...]
A Novel Dual Gate Strained-Silicon Channel Trench Power MOSFET For Improved Performance
We propose a new dual gate trench power MOSFET with strained Si channel that not only provides lower on resistance than the conventional trench MOSFET but also enables the in-circuit configurability of its characteristics for [...]
A Complete Analytic Surface Potential-Based Core Model for Undoped Cylindrical Surrounding-Gate MOSFETs
An analytic surface potential-based non-charge-sheet core model for cylindrical undoped surrounding-gate (SRG) MOSFETs is presented in this brief. Starting from the exact surface potential solution of the Poisson’s equation in the cylindric surrounding-gate (SRG) MOSFETs, [...]
Diode Parameter Extraction by a Linear Cofactor Difference Operation Method
Ma C., Li B., Liu F., Chen Y., Zhang L., Zhang X., Liu F., Feng J., He J., Zhang L., Zhang X., Peking University, CN
The direct extraction of the key static parameters of a general diode by the new method named Linear Cofactor Difference Operator (LCDO) method has been carried out in this paper. From the developed LCDO method, [...]