Papers – Page 22 – TechConnect Briefs

Gas Flow Simulation in a PECVD Reactor

da Silva A.N.R., Morimoto N.I., LSI – EPUSP, BR

In this work are presented the gas flo simulation in a hand made PECVD-TEOS reactor. We used the FLOTRAN-CFD code of the ANSYS simulator to predict the velocity and temperature curves in the reactor. The [...]

Kinetic Monte Carolo Simulation of Thin Film Growth with Void Formation – Application to via Filling

Hiwatari Y., Kaneko Y., Ohara K., Murakami T., Kanazawa University, JP

In this paper, we study the void formation during via ﬁlling as a model of copper damascene plating for LSI interconnects. We developed a new model for crystal growth which enables us to study the [...]

A Physically-Based Model for Oxidation in a Circular Trench in Silicon

Xu Y., Sudhama C., Hong S., Sellers J.A., Ambadi S., Kamekona K., Averett G., Ruiz B., Wan I., Cai W., Wu Y., Costa J.C., Davies R.B., ON Semiconductor, US

Oxidation in a circular trench is of relevance in several applications, including trench capacitors in memories. In this work a model for stress-dependent oxidation is presented. The model is based on modifications of the Deal-Grove [...]

Numerical Simulation of Superconformal Electrodeposition Using the Level Set Method

Wheeler D., Josell D., Moffat T.P., NIST, US

Damascene copper is rapidly replacing aluminum as the interconnect material of choice in silicon technology. The change is driven by the lower electrical resistivity of copper, which decreases power consumption and permits increased central processor [...]

The Level-Set Method for Modeling Epitaxial Growth

Ratsch C., Petersen M., Caflisch R.E., University of California, Los Angeles, US

A level-set model for the simulation of epitaxial growth is described. In this model, the motion of island boundaries of discrete atomic layers is determined by the time evolution of a continuous level-set funciton psi. [...]

Numerical Investigations of Laser Induced Crystallization and Stress Development in Phase Change Electroceramic Materials

Pirch N., Baldus O., Waser R., Kreutz E.W., RWTH Aachen, DE

Barium-Strontium-Titanate, BST, in the stoichiometry Ba0.7Sr0.3TiO3 to Ba0.5Sr0.5TiO3 is been considered as a promising candidate to enter into the DRAM manufacturing technology. The incompatibility between the temperatures required to crystallize the ferro/para-electric layer into the [...]

A Novel Scheme of Mesh Generation from an Arbitrary Topography for MEMS Analysis

Kwon O-S, Yoon I-T, Yoon S-H, Yoon S-I, Yoon I-T, Yoon S-H, Yoon S-I, Ha T-S, Yoon I-T, Yoon S-H, Yoon S-I, Won T-Y, Inha University, KR

Binding energies for an exciton (X) trapped in the two-dimensional quantum dot by a charge impurity located on the z axis at a distance from the dot plane are calculated by using the method of [...]

Efficient Full-Wave Modeling of Electromagnetic Field Propagation Through Micro-Optical Link

Sikorski Z., Turowski M., Przekwas A.J., CFD Research Corporation, US

Low dimensions of contemporary micro-optics imply the necessity of inclusion of vector diffraction effects into optical models. Classical geometrical optics and Gaussian beam calculation approaches are too coarse approximations. They do not properly take into [...]

3D Biconjugate Gradient-Multi Grid Coupling Schemes for Field Equations in Semiconductor Device Simulation

Ayubi-Moak J., Wigger S., Goodnick S.M., Saraniti M., Arizona State University, US

A significant portion of the time required for simulating full three-dimensional (3D) charge transport in semiconductor devices using particle-based methods is spent solving the necessary field equations. Two highly effective, iterative techniques available for solving [...]

Analysis of Phonon Dispersion Relations From Atomic Model to Continuum Theory

Chen Y., Lee J.D., The George Washington University, US

The phonon dispersion relations calculated by atomic model: shell model and ab initio, and by microcontinuum theory are introduced in this paper. It is found that both atomic models and microcontinuum theory can describe the [...]