Papers – Page 21 – TechConnect Briefs

Simulation of Wigner Function Transport in Tunneling and Quantum Structures

Jacoboni C., Bertoni A., Bordone P., Giacobbi N., University of Modena, IT

The Wigner-function approach to quantum transport in mesoscopic electron devices is presented. The concept of Wigner paths allows the formulation of a Monte Carlo simulation which is quantum mechanically rigorous and yet very similar to [...]

Structural and Electronic Properties of Quantum Dot Surfaces

Galli G., Puzder A., Willilamson A.J., Grossman J.C., Pizzagalli L., Lawrence Livermore National Laboratory, US

We report on recent progress in studying the structural, electronic and optical properties of Si and Ge quantum dots, using first principles calculations. We used both ab initio molecular dynamics techniques and quantum Monte Carlo [...]

Diffusion Mechanisms and Capture Radii in Silicon

Beardmore K., Windl W., Haley B.P., Gronbech-Jensen N., Motorola, US

We have calculated the capture radii for several defect pairs, consisting of dopants and point defects (interstitials I and vacancies V, in silicon. Interaction potentials for I-V, I-B, P-V, and As-V were calculated using the [...]

Introducing Monte Carlo Diffusion Simulation into TCAD tools

Strecker N., Moroz V., Jaraiz M., Avant!, US

Advantages and disadvantages of the alternative approaches to the dopant diffusion simulation are discussed. Complementary use of the Monte Carlo and continuum diffusion models is suggested. Application of the integrated commercially available process simulation tools [...]

Nanoworld Semiconductor Industry – State and Future Challenges of Technology Computer Aided Design

Puchner H., Cypress Semiconductor, US

Several application examples of nanoscale techniques used to influence or enhance the understanding of material properties as well as processing behavior are presented. We will also present a review of first principle density functional theory [...]

Spatially Resolved Electron Energy-Loss Spectroscopy, a Tool to Verify Electronic Structure Calculations in Nanostructured Materials

Duscher G., Plitzko J., Kisielowski C., Buzko R., Pennycook S.J., Pantelides S.T., North Carolina State University, US

Modern mcroscopy allows a direct comparison between experimental results and the atomic and electronic structure as obtained by state of the art ab-initio calculations. The phase reconstruction technique allows one to determine the positions of [...]

Characterization of Ion Implantation in Si Using Infrared Spectroscopy with a Lock-In common-Mode-Rejection Demodulation

Rábag F., Mandelis A., Salnik A., University of Toronto, CA

B+, P+, and As+ ion-implanted Si wafers in the implantation dose range 1x1011 - 1x1013 ions/cm2 were characterized using Photothermal Radiometry (PTR). A comparison between the conventional frequency scan and a new technique called Common-Mode-Rejection [...]

The Numerical Simulation of a Substractive Process for the Fabrication of 3-D Low Temperature Co-Fired Ceramics Packaging Structures and Devices: Jet Vapor Etching

Ramos I., García L., Furlan R., Santiago-Aviles J.J., Pereira M.T., University of Puerto Rico at Humacao, US

We applied numerical simulation in order to gain knowledge and insight into the physical processes associated with Jet Vapor Etching, a subtractive process used in the machining of Low Temperature Co-Fired Ceramic (LTCC) tapes. Also, [...]

Process and Device Calibration for 31/51nm NMOS/PMOS Devices fabricated by Direct Write E-Beam

Puchner H., Eib N., Kimball J., Mirabedini M., Haywood J., Aronowitz S., Cypress Semiconductor, US

In order to ensure predictability of process and device calibration tools, we manufactured CMOS devices with smallest end-of-line gate electrode dimensions of 31nm and 51nm by applying direct write e-beam lithography. A special test-chip was [...]

Rule Based Validation of Processing Sequences

Hansen U., Germer C., Büttgenbach S., Franke H-J, TU Braunschweig, DE

In conventional mechanical engineering the development of a product is influenced only little by the specific requirements of the fabrication processes. When looking at the domain of micro mechanical devices this circumstance is no longer [...]