Papers – Page 8 – TechConnect Briefs

TCAD Modeling using a Neural Network Based Approach

Matei R., Dima G., Profirescu M.D., University Politehnica of Bucharest, RO

This paper presents system level modelling and simulations results of two closed loop, force-feedback control strategies for micromachined tunnelling accelerometers. The first approach is based on the incorporation of the sensing element in a sigma-delta [...]

Determination of Low-Frequency Noise Spectrum in Ion-sensitive Field Effect Transistors (ISFET’s) Based on a Physical Model for Drift

Jamasb S., Collins S.D., Smith R.L., Conexant Systems, US

A physical model for drift in pH-sensitive ISFET's is employed to extract the inherent low-frequency noise power spectral density associated with these devices. The noise spectrum extracted from measured drift data demonstrates ideal 1/f noise [...]

Simulation of Recess-Structure Dependence of Gate-Lag Phenomena in GaAs MESFETs

Horio K., Mitani Y., Wakabayashi A., Shibaura Institute of Technology, JP

We have made two-dimensional simulation of turn-on characteristics of recessed-gate and buried-gate GaAs MESFETs, and studied how the gate-lag or the slow current transient (which may occur due to surface states) is affected by the [...]

Three-Dimensional Simulation of AlxGa1-xAs/GaAs Gradual Heterojunction Bipolar Transistor

García-Loureiro A.J., Pena T.F., Prat Viñas Ll., Univ. Santiago de Compostela, ES

In this work we present the results of the simulation of AlxGa1-xAs/GaAs gradual heterojunction bipolar transistor using a parallel three-dimensional semiconductor device simulator. This simulator is based on drift-diffusion transport model. In order to solve [...]

Broadband Millimeter Wave Finline Antenna Simulation and Performance

Fu J.S., Ng C.L., Kwang Y., Sia E.K., Lu C., Nanyang Technological University, SG

Analysis on fin line antenna with broadband and tolerable VSWR characteristic was done. Emphasis were placed in the formulation of the taper equations for the transmission fin line and radiation section and verification of good [...]

Using ‘Adaptive Resurf’ Technique and Field Plate Working to Improve the Safe Operating Area of n-type Drain Extended MOS Transistors

Bakeroot B., Moens P., Vermandel M., Doutreloigne J., University of Gent, BE

Using TCAD, an n-type DEMOS (Drain Extended MOS) has been developed in a standard 0:35 mCMOS technology. The devices are optimised towards a Safe Operating Area (SOA) of 60 - 65 V using an n-type [...]

A Simplified Approach for Noise Parameter Transformation Between Common Emitter and Common Base InP DHBT

Xiong Y.Z., Ng G.I., Wang H., Tan C.L., Yang H., Nanyang Technological University, SG

A new approach, based on the typical T-model of InP DHBT, has been developed which uses only a simple set of formulas to transform noise parameters between common emitter and common base configurations. The calculated [...]

A Model for Fully Depleted Double Gate SOI MOS Transistors Including Temperature Effects

Gharabagi R., St. Louis University, US

A model for a fully depleted double gate Silicon on Insulator (SOI) Metal Oxide Semiconductor (MOS) Transistors is presented. Small geometry effects such carrier velocity saturation, mobility degradation, and channel length modulation are included. Both [...]

Semi-Empirical Approach to Modeling Reverse Short-Channel Effect in Submicron MOSFET’s

Chiah S.B., Zhou X., Lim K.Y., Wang Y., See A., Chan L., Nanyang Technological University, SG

A model for effective channel doping in submicron LDD nMOSFET's is presented by adding the effect of the lateral nonuniform pile-up charge centroid to the Gaussian profile with peak doping near the edge of the [...]

A Scalable RF Model of the Metal-Oxide-Metal (MOM) Capacitor

Chunqi G., Manh Anh D., Zheng Z., Boyland F., Chartered Semiconductor Manufacturing Ltd., SG

An accurate, scalable RF subcircuit model is presented for Metal-Oxide-Metal (MOM) capacitor. Polynomial equations are used to describe the relation between the value of each subcircuit component and the area of MOM capacitor. The model [...]