Papers – Page 7 – TechConnect Briefs

The Use of Bohm Trajectories and the Effective Potential in Probing Quantum Mechanical Behavior in 2-D and Spintronic Sub-micron Devices

Shifren L., Akis R., Ferry D.K., Arizona State University, US

We utilize an effective potential to reproduce Bohm (quantum) trajectory behavior using purely classical trajectories. The effective potential is a novel method for including certain quantum phenomena into classical simulations by projecting the non-zero dimensions [...]

Towards a Compact Scattering Model for Nanoscale MOSFETs

Rahman A., Ren Z., Rhew J-H., Lundstrom M.S., Purdue University, US

A new compact model for nanoscale MOSFETs based on scattering theory is proposed for the full range of VGS and VDS covering sub-threshold, linear and saturation regions of operation. Quantum confinement and carrier degeneracy are [...]

An Effective Potential Method for Including Quantum Effects Into the Simulation of Ultra-Short and Ultra-Narrow Channel MOSFETs

Akis R., Milicic S., Ferry D.K., Vasileska D., Arizone State University, US

Quantum effects are known to occur in the channel region of MOSFET devices, in which the carriers are confined in a triangular potential well at the semiconductor-oxide interface. Typically, these effects are quantified by a [...]

A Comparative Study of Double-Gate and Surrounding-Gate MOSFETs in Strong Inversion and Accumulation Using an Analytical Model

Chen Y., Luo J., University of California-Berkeley, US

An analytical model for the electric characteristics of ultrathin double-gate and surrounding-gate MOSFETs in strong inversion and accumulation is presented. The analytical solutions to the 1-D simplified Poisson's equation in both Cartesian and cylindrical coordinates [...]

Simulation of HgCdTe Double Layer Heterojunction Detector Devices

Hess G.T., Sanders T.J., Newsome G., Fischer T., Florida Institute of Technology, US

Mercury-Cadmium-Telluride (HgCdTe) diodes are used as detectors of long wavelength photons by interaction of the infrared radiation with the atomic lattice of the material, creating hole-electron pairs and subsequent photocurrents. Models for these physical phenomena [...]

Parallel Dynamic Load Balancing for Semiconductor Device Simulations on a Linux Cluster

Li Y., Lin S-S., Liu J-L., Lin S-S., Yu S-M., Liu J-L., Chao T-S., Sze S.M., National Chiao Tung University, TW

A parallel dynamic load balancing for 2-D and 3-D semiconductor device simulations is proposed. The hydrodynamic and drift diffusion models are discretized and solved with finite volume (box) and monotone iterative methods. Dynamic load balancing [...]

A New Approach for the Extraction of Threshold Voltage for MOSFET’s

Wong J.S., Ma J.G., Yeo K.S., Do M.A., Nanyang Technological University, SG

A new approach for the extraction of threshold voltage (Vth) is proposed, namely, the "Third Derivative of Drain-Source Current" method or simply "TD" method. This method extracts the Vth by finding the Vgs where the [...]

Noise Modelling of Microwave Bipolar Transistors

Patti F., Miceli V., Spagnolo B., Università di Palermo, IT

In this paper we present a stochastic approach to study the noise modelling of bipolar microwave transistors. Starting from experimental on-wafer measurements of the scattering and noise parameters of these bipolar devices we obtain the [...]

Investigation of the Mechanism of Floating Node Assisted CMOS Latch-Up

Sim S-P., Guo P., Kordesch A., Chen W.F., Liu C-M., Yang C.Y., Lee K., Santa Clara University, US

A new phenomenon of floating node assisted CMOS latch-up is experimentally observed and investigated using TCAD simulation. Using test structures having parasitic bipolar transistors and an electrically floating N+ diffusion node located at various distances [...]

Modeling of Antipodal/BCSSS Transition for Millimeter Wave Finline High Q Local Injected Mixer

Sia E.K., Fu J.S., Lu C., Tan S.H., Nanyang Technological University, SG

Millimeter-wave application in intelligent vehicle sensor and others has been in great demand recently for it's small size, high data rate and high resolution property. In this paper, we report our design and simulation of [...]