Papers – Page 9 – TechConnect Briefs

Substrate Current Simulations at Elevated Temperatures

Lyumkis E., Mickevicius R., Polsky B., Loechelt G., Zlotnicka A., Thoma R., Integrated Systems Engineering, Inc., US

We report results of hydrodynamic simulations and measurements of substrate currents in submicron MOSFET. Both simulations and measurements show anomalous dependence of the substrate current on lattice temperature, which is consistent with previously published experimental [...]

A Physics-Based Impact Ionization Model Using Six Moments of the Boltzmann Transport Equation

Grasser T., Kosina H., Gritsch M., Selberherr S., TU Wien, AT

Due to the ever decreasing device geometries non-local effects gain more and more importance. It is particularly well known that impact ionization is not properly described by neither a local field nor a local energy [...]

3-D Simulation and Modeling of Signal Isolation in RF/IF Circuits

Bharatan S., Welch P., To K.H., Thoma R., Huang M., Motorola, Digital DNA Laboratories, US

In this paper, we present a practical methodolgy for the 3-dimensional simulation of signal isolation structures along with comparison to measurements made on test structures. We also describe the extraction of a scalable compact model [...]

A Qualitative Study on Global and Local Optimization Techniques for TCAD Analysis Tasks

Binder T., Heitzinger C., Selberherr S., Technical University Wien, AT

We compare the two well-known global optimization methods, simulate annealing and genetic optimization, to a local gradient-based optimization techniques. We rate the applicability of each method in terms of the minimal achievable target value for [...]

Impact of Non-Stationary Transport Effects on Realistic 50nm MOS Technology

Munteanu D., Le Carval G., Guegan G., LETI, CEA/Grenoble, DMEL, FR

This paper highlights the impact of non-stationary transport on performances of deep submicron CMOS bulk technology. We present a quantitative analysis of technology influence on the needed level for carrier transport modeling (Drift-Diffusion versus Energy [...]

Improved Modified Local Density Approximation for Modeling of Size Quantization in NMOSFETs

Jungemann C., Nguyen C.D., Decker S., Meinerzhagen B., Universitat Bremen, DE

An improved version of the modified local density approximation is presented which correctly describes the impact of size quantization on the threshold voltage and capacitance of state-of-the-art NMOSFETs with very thin oxides for temperatures from [...]

Spatial Modulation of the Dielectric Permittivity and its Effect on the Spectral Responsivity of Heterodimensional Photodetectors

Castro F., Nabet B., Motorola Laboratories, US

Spectral photocurrent measurements on AlGaAs/GaAs heterodimensional detectors show a peak near the absorption edge of GaAs under low incident power and at high biasing levels. Previous work has attributed similar results to the Franz-Keldysh spectral [...]

Numerical Simulation and Analytical Modeling of Strong-Inversion Gate Capacitance in Ultra-Short (30nm) MOSFETs

Sudhama C., Spulber O., McAndrew C., Thoma R., Motorola SPS, US

Bulk and novel MOSFET structures with gate-lengths in the 30nm regime are to become industry standards in ~2007. As devices are scaled down to these lengths, overlap- and fringe-capacitance between the gate and source/drain regions [...]

Time Series Modelling of Surface Topography Generated by Ultrasonic Machining Process

Murti V.S.R., Naga Prasada Rao B., Krishna Reddy M., Osmania University, IN

In these studies the surface roughness profiles were modelled and analysed for a better understanding of the mechanism of metal erosion in USM. Different materials were selected for this purpose based on their diverse properties [...]

Bonding Pad Resistance. A Combined Approach

Bouche G., Gonella R., Sabouret E., Technology Modeling STMicroelectronics, FR

Introducing new intermetal materials, with improved electrical properties but lowered mechanical resistance, requires in terms of reliability to design new structures for pads. The test structures under fabrication have been simulated to try and evaluate [...]