Papers – Page 4 – TechConnect Briefs

Finite Element Approach for Reactive Microfluidic Devices

Hsing I-M, Srinivasan R., Jensen K.F., Schmidt M.A., Hong Kong University of Science and Technology, HK

We report a finite element method (FEM) based model for simulating microfluidic devices with chemical reactions. The simulation approach incorporates a general mesh generation procedure, which allows us to explore different application-oriented designs of microfluidic [...]

Unsteady Gaseous Flows in Tapered Microchannels

Aubert C., Colin S., Caen R., Laboratoire de Genie Mecanique de Toulouse, FR

The aim of the paper is to contribute to the modeling of unsteady slip flows in rectangular microchannels with slowly varying cross-sections. A model is proposed for a microdiffuser submitted to sinusoidal pressure fluctuations at [...]

Computational Two-Dimensional Finite-Element Analysis of Flow Behavior Inside Microfluidic Amplifiers

Simões E.W., Furlan R., Zemel J.N., Escola Politecnica da Universidade de Sao Paulo, BR

Two-dimensional finite-element analysis was conducted using the commercial ANSYS (FLOTRAN) package to investigate nitrogen flow inside of two types of microfluidic amplifiers (wall attachment and jet deflection). Our simulations demonstrate that for supply pressures higher [...]

Squeeze Film Damping Effect on the Dynamic Response of a MEMS Torsion Mirror

Pan F., Kubby J., Peeters E., Tran A.T., Mukherjee S., XEROX, Xerox Wilson Research Center, US

Analytical formulae for the squeeze film darnping torque on a MEMS torsion mirror are derived based on series solutions to the linearized Reynold's equation. The derivation is carried out under the assumption that the angular [...]

A Surface Recombination Velocity Model for Liquid Flow in Microchannels

Zemel J.N., University of Pennsylvania and Scitefair International Inc, US

A number of years ago, Eyring introduced the free volume concept to explain why the viscosity of liquids decreased with increasing temperature while at the same time the density for most liquids also decreased (water [...]

Thermal Simulation Tools for Microsystem Elements

Székely V., Rencz M., Páhi A., Poppe A., Hajder Sz., Technical University of Budapest, HU

Two different field solver tools have been developed in order ro facilitate fast thermal and electro-static simulation of microsystem elements. The pSTHERMANAL program is capable for the fast steadystate and dynamic simulation of suspended multilayered [...]

From Layout to System Simulation: An Example of an Oxygen Sensor

Camon H., Djafari-Rouhani M., Gué A.M., Dilhan M., Alonso C., Jammes B., LAAS/CNRS, FR

The development of microsystems has shown that the technologies and tools are mature enough to investigate the possibilities of complete CAD tools, as is the case in integrated circuit design. An oxygen sensor has been [...]

Electro-Thermal Modeling: Design Tool for the Conception of a Low Power SnO2 Gas Sensor

Astié S., Gué A.M., Scheid E., Guillemet J.P., LAAS/CNRS, FR

The sensor's operating principle consists in measuring the resistance variations of a thin semiconductive layer heated between 250 and 450?C as a function of the nature and quantity of the molecules adsorbed on its surface. [...]

Breakdown in the Output Characteristics of Deep Submicron, a-Si:H TFTs

Colalongo L., Valdinoci M., Forunato G., Mariucci L., Rudan M., University of Bologna, IT

Purpose of this work is to investigate the breakdown in the output characteristics of short-channel (0.2-1.o ,um) amorphous silicon (a-Si:H) thin-film transistors (TFTs). Such effect which, in the case of a-Si:H devices, has been detected [...]

Simulation of Narrow-Width Effects in Sub-Half-Micron n-MOSFETs with LOCOS Isolation

Loiko K.V., Peidous I.V., Ho H-M, Lim D.H., Chartered Semiconductor Manufacturing Ltd., SG

The anomalous threshold voltage behavior of sub-halfmicron LOCOS-isolated n-MOSFETs is explained by the segregation of boron and narrow-mask effect of local oxidation. A novel approach to simulating narrow-width effects is proposed. It combines 2-D process [...]