Nanoparticle Synthesis & Applications – Page 57

Unambiguous Extraction of Threshold Voltage Based on the Transconductance-to-Current Ratio

Cunha A.I.A., Schneider M.C., Galup-Montoro C., Caetano C.D.C., Machado M.B., Federal University of Santa Catarina, BR

This paper presents a very simple methodology for determining the threshold voltage. The procedure is based on the expressions of the Advanced Compact MOSFET (ACM) model, valid in all regimes of operation, which assures physical [...]

Extraction of Mosfet Effective Channel Length and Width Based on the Transconductance-To-Current Ratio

Cunha A.I.A., Schneider M.C., Galup-Montoro C., Caetano C.D.C., Machado M.B., Federal University of Santa Catarina, BR

This paper presents a very simple methodology for determining the effective channel length and width, which is independent of the determination of the threshold voltage. The procedure is based on measurement of the transconductance-to-current ratio [...]

Analog Design Tool based on the ACM model

Galup-Montoro C., Schneider M.C., dos Reis Machado C., Universidade Federal de Santa Catarina, BR

This paper presents MOSVIEW, a software tool for transistor-level analog design, which is based on the Advanced Compact MOSFET (ACM) model [1, 2], derived from physics. This tool allows rapid exploration of the design space. [...]

All-Region MOS Model of Mismatch due to Random Dopant Placement

Klimach H., Galup-Montoro C., Schneider M.C., Universidade Federal de Santa Catarina, BR

Electron device matching has been a key factor on the performance of today’s analog or even digital electronic circuits. This paper presents a study of drain current matching in MOS transistors. A model for MOS [...]

Optimized Threshold-Voltage MOS Transistor Compact Model from the 4-Component Theory

Jie B.B., Sah C-T, University of Florida, US

Based on Sah's 1996 four-component exact formula, a new optimized compact model is derived for long channel MOS transistors. This new model covers subthreshold and linear operation ranges using four independent optimization voltage parameters in [...]

Poster Papers

Statistical Simulations of Oxide Leakage Current in MOS Transistor and Floating Gate Memories

Larcher L., Pavan P., Università di Modena e Reggio Emilia, IT

The purpose of this paper is to illustrate a physically-based model allowing the statistical simulations of oxide leakage currents in MOS transistors and Floating Gate memories. This model computes the leakage current through defects randomly [...]

Compact Modeling of Four-Terminal Junction Field-Effect Transistors

Liou J., University of Central Florida, US

This paper presents a physics -based compact model for a four terminal (independent top and bottom gates) junction field-effect transistor (JFET). The model describes the JFET’s dc and ac characteristics with a high degree of [...]

Physics and Modeling of Noise in SiGe HBT Devices and Circuits

Niu G., Auburn University, US

This paper gives an overview of the physics and modeling of noise in SiGe HBT devices and circuits, including RF broadband noise, low-frequency noise, and oscillator phase noise. The ability to simultaneously achieve high cutoö [...]

Two-/Three-Dimensional GICCR for Si/SiGe Bipolar Transistors

Tran H., University of Technology Dresden, DE

This paper presents the derivation of a two- and threedimensional (2D/3D) generalized Integral-Charge Control Relation (GICCR) that is based on an exact physical relation for the transfer current of bipolar transistors. The resulting compact equation [...]