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HomeTopicsNanoelectronics

Topic: Nanoelectronics

Modeling of On-Chip Simultaneous Swithcing Noise in VDSM CMOS Circuits

Tang K.T., Friedman E.G., University of Rochester, US
On-chip simultaneous switching noise (SSN) has become an important issue in the design of power distribution networks in current VLSI/ULSI circuits. An analytical expression characterizing the simultaneous switching noise voltage is presented here based on [...]

A Novel Method for the De-Embedding of S-Parameters of Double Heterojunction d-doped PHEMTs – Modeling and Measurements

Rao R.V.V.V.J., Joe J., Chia Y.W.M., Ang K.S., Wang H., Ng G.I., National University of Singapore, SG
A simple and accurate method for extracting small-signal signal equivalent circuit for double heterojunction d-doped PHEMTs was developed. The circuit elements were extracted from the S-parameters of PHEMTs. Parasitic inductances Lg, Ld and Ls were [...]

Verilog-AMS Eases Mixed Mode Signal Simulation

Miller I., Cassagnes T., Motorola ESD Europe, US
The ability to design and verify mixed mode (digital, analog, electrical, and non-electrical) systems is key to the development of new products for the ever expanding electromechanical market. Although there are several individual point tools [...]

Compact Modeling for Deep Submicron Devices

Modeling On-Currents for n-MOSFETs: Ultimate Limits vs. the NTRS

Assad F., Ren Z., Vasileska D., Datta S., Lundstrom M.S., Purdue University, US
The continued evolution of Si technology hinges to a large extent on the ability to maintain high on-currents while achieving low off-currents. As we move from sub-micron to nanoscale technology, it is not at all [...]

An Overview of the 3D Simulation Efforts at Arizona State University Directed Towards Understanding Transport in the Quantum Dots and the Ultra-Small Devices of the Future

Akis R., Vasileska D., Ferry D.K., Arizona State University, US
A brief summary of some of the simulation efforts within the Nanostructure Research Group at Arizona State University is presented, with emphasis on the tools used for modeling deep-submicrometer devices and quantum dot structures under [...]

Full-Band Cellular Automata for Modeling Transport in Sub-Micrometer Devices

Saraniti M., Wigger S.J., Goodnick S.M., Illinois Institute of Technology, US
The aim of the present work is to discuss a new cellular automaton (CA) approach to model charge transport in semiconductors taking into account the full-band representatoin of the electronic structur eand of the phonon [...]

Simulation Study of ZnTe-CdZnTe Based Asymmentric Step Strained Layer Quantum Well Infrared Photo-Detectors

Vaya P.R., Srinivasan R., ITT Madras, IN
A AnTe - CdZnTe system based asymmetric step quantum well structures have been analyzed and the effects of step discontinuity, well discontinuity, well width, and step with on absorption coefficient and detectivity, which have a [...]

Complex Potentials, Dissipative Processes and General Quantum Transport

Ferry D.K., Barker J.R., Akis R., Arizona StateUniversity, US
Complex potentials have been used in the past to simulate dissipative processes, but the normal form of a simple constant term of the form t / h i serves only to trap/detrap particles and does [...]

Quantum Device Modeling

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