Nanoelectronics – Page 29 – TechConnect Briefs

Effect of temperature and γ rays radiation on the electrical and optical characteristics of Quantum well structure based laser diode

Iqbal M.A., Ghani S., Punjab University, PK

Analysis of effect of temperature in the range (280k-300k) and radiation (X-rays and γ rays) on the AlGaInP based laser at 665nm emission wavelength has been carried out. Before and after irradiation, current-voltage (I-V), light-current [...]

Characteristic Optimization of Single- and Double-Gate Tunneling Field Effect Transistors

Lee K-F, Han M-H, Lo I-S, Yiu C-Y, Li Y., National Chiao Tung University, TW

The simulation results of this study have shown that the device with heavier source doping and shorter effective channel length lead to interesting device performance of TFETs. Such characteristic could be considered for device structure [...]

The Effects of Gamma rays on p-channel MOSFET

Iqbal M.A., Firdous U., Punjab University, PK

The effect of Gamma rays on PMOS is studied. The range of Gamma rays used from 1M.rad to 3M.rad. The device is exposed by gamma radiation and observes its parameters as Threshold voltage, trans-conductance and [...]

Growth and investigations on Fe/MgO/Fe magnetic tunnel junctions fabricated by dual ion beam sputtering technique

Singh B., Gupta P., Chaudhary S., Pandya D.K., Kashyap S.C., Inidan Institute of Technology Delhi, IN

The experimental observation of Tunnel Magnetoresistance (TMR) in 1996 by Moodera’s group of MIT has triggered intensive efforts worldwide to fabricate and investigate the magnetoresistive junctions showing a TMR effect. While in past 3-4 years, [...]

Optical properties of silicon nanoparticles: Influence of etching, surface oxidation and surface functionalization

Gupta A., Kluge S., Schulz C., Wiggers H., Universität Duisburg-Essen, DE

In this study, we investigated the properties of Si-NPs after surface etching, surface re-oxidation and surface functionalization processes. Surface etching of as-synthesized Si-NPs with hydrofluoric acid causes a blue shift compared to their initial emission [...]

Stable Light Emiting Electrochemical Cells Based in Supramolecular Interactions

Costa R.D., Lenes M., Ortí E., Bolink H.J., Graber S., Constable E.C., University of Valencia, ES

We will present a breakthrough in the stability of the simplest type of molecular electroluminescent devices, light-emitting electrochemical cells (LEECs). The main drawback of these molecular devices limiting their practical use is their short lifetimes [...]

Self – Heating Effects in Nanowire Transistors

Hossain A., Raleva K., Vasileska D., Goodnick S.M., Arizona State University, US

We investigate the role of self-heating effects on the electrical characteristics of a silicon nanowire transistor using a 3-D Monte Carlo device simulator that includes self-consistent solution of the energy balance equations for both acoustic [...]

Jet-printed Si nanowires for flexible backplane applications

Wong W.S., Raychaudhuri S., Sambandan S., Lujan R., Street R.A., Palo Alto Research Center, US

The integration of Si nanowire (Si NW) materials with low-temperature plastic substrates can enhance the performance of low-cost flexible electronics. We report the properties of Si NW field-effect transistors (FETs) fabricated with various contact metals [...]

Atomistic Simulations of Electronic Structure in Realistically-Sized Wurtzite InN/GaN Quantum Dots

Yalavarthi K., Gaddipati V., Ahmed S., Southern Illinois University at Carbondale, US

In this work, within a fully atomistic framework, we investigate the electronic structure of wurtzite InN quantum dots self-assembled on GaN substrates. The main objectives are two-fold: (1) to explore the origin, nature and the [...]

Critical currents in graphene ribbon Josephson junctions

Gabrielli P.G., ENEA, IT

Most of the remarkable transport properties of graphene have to do with its particular band structure at low energies: the undoped system has a finite number of Fermi points, placed at the corner of the [...]