Nanoelectronics – Page 30 – TechConnect Briefs

Enhancement of Defect Tolerance in the QCA-based Programmable Logic Array (PLA)

Notsu T., Miura K., Nakamae K., Osaka University, JP

In this study we analyze the precedent AND/OR plane cell of a programmable logic array (PLA) based on the quantum-dot cellular automata (QCA), then propose a modified layout that has better defect tolerance. We analyzed [...]

Neighbouring Levels Statistic and Shape of Quantum Dots: Si/Sio2

Filikhin I., Matinyan S.G., Vlahovic B., North Carolina Central University, US

We model the Si quantum dots (QDs) embedded into the SiO2 substrate. Single sub-band effective mass approach is used to calculate energy levels of electrons and heavy holes. For weak confinement regime (QD size D [...]

Comprehensive Examination of Intrinsic-Parameter-Induced Characteristic Fluctuations in 16-nm-Gate CMOS Devices

Han M-H, Li Y., National Chiao Tung University, TW

In this work, the intrinsic device parameter variability including the metal gate workfunction fluctuation (WKF), the process variation effect (PVE), and the random dopant fluctuation (RDF) in 16-nm-gate n-type MOSFETs (NMOS) and p-type MOSFETs (PMOS) [...]

3-state Quantum Dot Gate FETs in Designing High Sampling Rate ADCs

Karmakar S., Chandy J.A., Jain F.C., University of Connecticut, US

In this work we present Cadence simulation of 3-bit Analog-to-Digital Converters (ADCs) based on compact 3-QDFET comparators, using 32nm design rules with BSIM 3.2.0 and BSIM 3.2.4 models [3]. In addition, we present the precise [...]

Control of Conducting Path in Resistive Memory Utilizing Ferritin Protein with Metal Nano Dot

Uenuma M., Zheng B., Kawano K., Horita M., Yoshii S., Yamashita I., Uraoka Y., Nara Institute of Science and Technology, JP

Bio-nano-process (BNP) has been proposed as promising bottom-up process. Recently, there is large interest in application of BNP to memory devices such as resistive random access memory (ReRAM). According to the proposed resistive switching mechanisms, [...]

Backside Nanoscale Texturing to Improve IR Response of Silicon Photodetectors

Forbes L., Louie M.Y., Oregon State University, US

When the silicon is not strongly absorbing in the near infrared a back side textured surface works in conjunction with a totally internally reflecting front side surface to best increase the absorption of near infrared [...]

Application of YAG Laser Micro-Welding in MEMS Packaging

Bozorgi P., university of california, santa barbara, US

This paper reports a new packaging method for a wide range of MEMS for application on both the wafer and device scale. We show a complete set of experimental and modeling results for the application [...]

Adhesion of moulding compounds. Can material pre-selection increase the reliability of electronic components?

Pufall R., Michel B., Kaulfersch E., Infineon Technology AG, DE

It is well known that high temperature storage can degrade moulding compounds for chip encapsulation to such an extent that the adhesions to surfaces like copper (lead frames) or polyimide (chip coating) decreases drastically causing [...]

Electronics & Photonics

High dielectric tunability of Ba0.6Sr0.4TiO3 thin film deposited by radio-frequency sputtering

Zuyong F., Nanyang Technological University, SG

Recently, the nonlinear dielectric property of BST thin films has been investigated for the development of frequency agile RF and highper formance microwave tunable devices, which include phase shifters, tunable filters, steerable antennas, varactors, and [...]