Nanoelectronics – Page 20 – TechConnect Briefs

Improved RF Characteristics of Carbon Nanotube Interconnects with Deposited Tungsten Contacts

Vyas A.A., Madriz F., Kanzaki N., Wilhite P., Tan J., Yamada T., Yang C.Y., Santa Clara University, US

Carbon Nanofibers (CNFs) grown by Plasma Enhanced Chemical Vapor Deposition (PECVD) are potential next-generation interconnect materials due to their high current capacity. We designed and fabricated a test structure for RF characterization of CNF interconnects [...]

Current Degradation due to electromechanical coupling in GaN HEMT’s

Padmanabhan B., Vasileska D., Goodnick S.M., Arizona State University, US

The major reliability concern in GaN HEMT technology is the current degradation due to electromechanical coupling.Electromechanical coupling is the change in the piezoelectric polarization charge in the device with the application of bias. A theoretical [...]

On the Possibility of Ultra-Low Power Switching in Multilayer Graphene Nanostructures

Dellabetta B., Shumway J., Gilbert M.J., University of Illinois, US

A particularly attractive way to solve the power consumption problem in next generation logic devices is by harnessing collective motion of electrons. While collective phenomena are normally found at low temperatures, recent work suggests it [...]

Inherently Radiation Hardened Electronics: A Examination of III-V Nanowire Transistors and Spin-Based Logic Devices

Telesca D., Air Force Research Lab (AFRL), US

This work will present two avenues currently being pursued for inherently radiation hardened electronics. It will examine the current development of III-V all-around gate oxide nano-wire transistors. The carriers in these nanowires have dramatically increased [...]

Nanowire GMR Thin Films for Magnetic Sensors

Cox B., Crews N., Louisiana Tech University, US

The discovery of Giant magnetoresistance (GMR) in 1988 by Albert Fert and Peter Grünberg started a concentrated effort by researchers to comprehend the phenomenon and find suitable applications [1]. We present an elegant technique for [...]

Highly sensitive organic-inorganic heterojunction flexible photodetectors

Seo J.-H., Oh T.Y., Park J., Zhou W., Ju B.K., Ma Z., University of Wisconsin-Madison, US

Heterostructures formed between inorganic and organic materials could lead to many unique device applications due to their unique physical properties, such as mechanical flexibility, large area, low temperature processability and high performance. Since most n-type [...]

Topic: Nanoelectronics

Improved RF Characteristics of Carbon Nanotube Interconnects with Deposited Tungsten Contacts

Current Degradation due to electromechanical coupling in GaN HEMT’s

On the Possibility of Ultra-Low Power Switching in Multilayer Graphene Nanostructures

Inherently Radiation Hardened Electronics: A Examination of III-V Nanowire Transistors and Spin-Based Logic Devices

Nanowire GMR Thin Films for Magnetic Sensors

Highly sensitive organic-inorganic heterojunction flexible photodetectors

Nano Electronics & Photonic Devices

Thin film transistors with printed semiconductive oxide channel and silver source-drain electrodes

Supramolecular Dielectric for Low Voltage Organic Electronics

u-Helix 3D-antenna technology