Modeling & Simulation of Microsystems – Page 66

Optimized Behavioral Model of a Pressure Sensor Including the Touch-Down Effect

Peters D., Bechtold St., Laur R., University of Bremen, DE

The complexity of microsystems is steadily increasing due to the scaling of microelectronic as well as for example mechanical, optical or fluidic devices. In order to be able to get good designs fast, one has [...]

Coupled Package-Device Modeling for MEMS

Bart S.F., Zhang S., Rabinovich V.L., Cunningham S., Microcosm Technologies, Inc., US

Microelectromechanical Systems (MEMS), by their nature as sensors and actuators, require application specific packaging. The package is the near environment of the MEMS device and hence has a direct effect on its thermal behavior, on [...]

Visual Modeling and Design of Microelectromechanical System (MEMS) Transducers

Dewey A., Icoz E., Duke Univeristy, US

Microelectromechanical Systems (MEMS) integrates miniaturized mechanical structures with electronics to extend the benefits of planar integrated circuit technology to a broader class of systems. To realize the potential and growth of MEMS, new modeling, analysis, [...]

Partial-Element Equivalent-Circuit Model Simulation for Designing RF-Wireless Communication Products with Embedded Passive Components

Smith W.R., National Semiconductor Corporation, US

Rapidly increasing functionality and performance of RF/wireless communication products, along with mandated decreases in size, weight, and cost, have created a critical need to replace discrete, surface-mounted passive circuit components with embedded passives in substrate [...]

Compact Large-Displacement Model for Capacitive Accelerometer

Veijola T., Kuisma H., Lahdenperä J., Helsinki University of Technology, FI

A compact large-displacement model for a gas damped capacitive accelerometer is presented. The gas-film model has been derived from the modified nonlinear Reynolds equation, where the in uence of the gas rarefaction is included. The [...]

Equivalent Circuits, Behavioral and Multilevel Simulation

HEMT Optimization by Advanced RSM Models

Profirescu M.D., Dima G., Govoreanu B., Mitrea O., University Politehnica of Bucharest, RO

In this paper, the optimization of heterostructure devices using the Design of Experiments concept and advanced Response Surface Models is presented. As an example, the structural optimization of a pseudomorphic Al0.2Ga0.8As/In0.2Ga0.8As/GaAs pulse doped HEMT is [...]

MEMS/MST Model Verification and Materials Parameter Extraction Using MEMSPEC-2000

Gutierrez A., Aceto S., Simkulet M., Patti D., Liendhard M., Krawczyk T., Lundgren A., InterScience, Inc, US

We describe the current status of the MEMSPEC-2000 MEMS/MST characterization system. This system has been designed to provide automated multi-domain measurements of a wide range of MEMS/MST devices. The system is capable of high resolution [...]

IMAP: Interferometry for Material Property Measurement in MEMS

Jensen B.D., de Boer M.P., Miller S.L., Sandia National Laboratory, US

An interferometric technique has been developed for non-destructive, high-confidence, in-si tu determination of material properties in MEMS. By using interferometry to measure the full deflection curves of beams pulled toward the substrate under electrostatic loads, [...]

SPDC: An Automatic Generator of Input Data for Process Simulators from Process Flow Data for Manufacturing

Tatsumi T., Ansai H., Mukai M., Komatsu Y., Sony Corporation, JP

We have developed a system called SPDC, which is designed to automatically generate input data for simulation from process ow data for manufacturing. As this conversion is not one-to-one translation, SPDC prepares databased knowledge called [...]