Modeling & Simulation of Microsystems – Page 21

The Effect of a Multiple Carrier Model of Interface Trap Generation on Lifetime Extraction for MOSFETs

McMahon W., Matsuda K., Lee J., Hess K., Lyding J., University of Illinois, US

An isotope effect in the slope of the substrate current versus lifetime requires a model beyond the standard single carrier lucky electron model typically used for MOSFET lifetime extrapolation. A multiple scattering model is developed [...]

An Impact Ionization Model Including an Explicit Cold Carrier Population

Grasser T., Kosina H., Heitzinger C., Selberherr S., TU Vienna, AT

Conventional macroscopic impact ionization models which use the average carrier energy as main parameter cannot accurately describe the phenomenon in modern miniaturized devices. Here we present a new model which is based on an analytic [...]

Evaluation of the Breakdown Behavior of 4H-SiC Schottky Diodes with a p-Guardring Junction Termination

Felsl H.P., Wachutka G., Münich University of Technology, DE

We have investigated the reverse behavior of 4H Silicon Carbide (SiC) Schottky diodes with a p-guardring junction termination. The breakdown behavior was analyzed with respect to the doping concentration of the epi-layer underneath the Schottky [...]

Fullband Particle-Based Simulation of High-Field Transient Transport in III-V Semiconductors

Wigger S., Saraniti M., Goodnick S.M., Leitenstorfer A., Arizona State University, US

Motivated by the recent experimental measurements of Tera-Hertz radiation [1], this work presents the transient analysis of photogenerated electron-hole pairs in GaAs and InP pin diodes usinga full-band particlebased simulator. Excellent agreement is found between [...]

Non-Parabolicity and Non-Maxwellian Effects on Gate Oxide Tunneling

Gehring A., Grasser T., Selberherr S., TU Vienna, AT

Simulation of gate oxide tunneling currents in subquartermicron devices requires correct modeling of the electron energy distribution function in the channel region. However, the common assumption of a heated Maxwellian distribution function leads to a [...]

The Role of the Quantization Effects on the Operation of 50 nm MOSFET and 250 nm FIBMOS Devices

Vasileska D., Knezevic I., Akis R., Ferry D.K., Arizona State University, US

We investigate quantum-mechanical space quantization effects in conventional MOSFET devices and asymmetric device structure fabricated via focused ion beam technique (FIBMOS device). We find that the inclusion of the quan-tum-mechanical space-quantization effects along the growth [...]

Topic: Modeling & Simulation of Microsystems

The Effect of a Multiple Carrier Model of Interface Trap Generation on Lifetime Extraction for MOSFETs

An Impact Ionization Model Including an Explicit Cold Carrier Population

Evaluation of the Breakdown Behavior of 4H-SiC Schottky Diodes with a p-Guardring Junction Termination

Fullband Particle-Based Simulation of High-Field Transient Transport in III-V Semiconductors

Non-Parabolicity and Non-Maxwellian Effects on Gate Oxide Tunneling

The Role of the Quantization Effects on the Operation of 50 nm MOSFET and 250 nm FIBMOS Devices

2D Analysis of Source-to-Drain Tunneling in Decananometer MOSFETs with the Density-Gradient Model

DD and HD Models for Noise due to Impact Ionization in Si and SiGe Devices Verified by MC Simulations

The Failure of the Hydrodynamic Transport Model for Simulation of Partially Depleted SOI MOSFETs and its Revision

Semiconductor Device Modeling